Dr Meng Duan
- Affiliate (School of Engineering)
email:
Meng.Duan@glasgow.ac.uk
R305, Level 3, School of Engineering, Rankine Building, Oakfield Avenue
https://orcid.org/0000-0002-0205-9423Publications
2019
Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)
2018
Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)
Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)
Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)
2017
Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)
Navarro, C. et al. (2017) Extended analysis of the Z²-FET: operation as capacitorless eDRAM. IEEE Transactions on Electron Devices, 64(11), pp. 4486-4491. (doi: 10.1109/TED.2017.2751141)
Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi: 10.23919/SISPAD.2017.8085328)
Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi: 10.23919/SISPAD.2017.8085330)
Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi: 10.1109/IRPS.2017.7936419)
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B. and Asenov, A. (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), pp. 2478-2484. (doi: 10.1109/TED.2017.2691008)
Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)
2016
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Vigar, D., Asenov, A. , Gerrer, L., Chandra, V., Aitken, R. and Kaczer, B. (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63(9), pp. 3642-3648. (doi: 10.1109/TED.2016.2590946)
2015
Duan, M. et al. (2015) Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 Dec 2015, 20.4.1-20.4.4. ISBN 9781467398947 (doi: 10.1109/IEDM.2015.7409742)
2014
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2014) Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions. IEEE Transactions on Electron Devices, 61(9), pp. 3081-3089. (doi: 10.1109/TED.2014.2335053)
2013
Duan, M. , Zhang, J., Ji, Z., Zhang, W.D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2013) New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation. IEEE Transactions on Electron Devices, 60(8), pp. 2505-2511. (doi: 10.1109/TED.2013.2270893)
Articles
Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)
Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)
Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)
Navarro, C. et al. (2017) Extended analysis of the Z²-FET: operation as capacitorless eDRAM. IEEE Transactions on Electron Devices, 64(11), pp. 4486-4491. (doi: 10.1109/TED.2017.2751141)
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B. and Asenov, A. (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), pp. 2478-2484. (doi: 10.1109/TED.2017.2691008)
Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Vigar, D., Asenov, A. , Gerrer, L., Chandra, V., Aitken, R. and Kaczer, B. (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63(9), pp. 3642-3648. (doi: 10.1109/TED.2016.2590946)
Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2014) Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions. IEEE Transactions on Electron Devices, 61(9), pp. 3081-3089. (doi: 10.1109/TED.2014.2335053)
Duan, M. , Zhang, J., Ji, Z., Zhang, W.D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2013) New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation. IEEE Transactions on Electron Devices, 60(8), pp. 2505-2511. (doi: 10.1109/TED.2013.2270893)
Conference Proceedings
Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)
Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)
Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi: 10.23919/SISPAD.2017.8085328)
Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi: 10.23919/SISPAD.2017.8085330)
Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi: 10.1109/IRPS.2017.7936419)
Duan, M. et al. (2015) Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 Dec 2015, 20.4.1-20.4.4. ISBN 9781467398947 (doi: 10.1109/IEDM.2015.7409742)