Valin, R., Martinez, A., Aldegunde, F. and Barker, J.R. (2014) Impact of Discrete Dopants on an Ultra-scaled FinFET Using Quantum Transport Simulations. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 345-348. ISBN 9781479943760

2012

Aldegunde, M., Martinez, A. and Barker, J.R. (2012) Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations. IEEE Electron Device Letters, 33(2), pp. 194-196. (doi: 10.1109/LED.2011.2177634)

2011

Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. (2011) Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors. IEEE Transactions on Electron Devices, 58(8), pp. 2209-2217. (doi: 10.1109/TED.2011.2157929)

Towie, E., Watling, J. and Barker, J. (2011) Remotely screened electron-impurity scattering model for nanoscale MOSFETs. Semiconductor Science and Technology, 26(5), 055008. (doi: 10.1088/0268-1242/26/5/055008)

2010

Martinez, A., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. (2010) Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: a fully three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 57(7), pp. 1626-1635. (doi: 10.1109/TED.2010.2048405)

Barker, J.R. (2010) Quantum phase-space distributions with compact support. Physica E: Low-Dimensional Systems and Nanostructures, 42(3), pp. 491-496. (doi: 10.1016/j.physe.2009.06.082)

Martinez, A., Barker, J., Seoane, N., Brown, A. and Asenov, A. (2010) Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study. Journal of Physics: Conference Series, 220(1), 012009. (doi: 10.1088/1742-6596/220/1/012009)

2009

Martinez, A., Kalna, K., Sushko, P.V., Shluger, A.L., Barker, J.R. and Asenov, A. (2009) Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study. IEEE Transactions on Nanotechnology, 8(2), pp. 159-166. (doi: 10.1109/TNANO.2008.917776)

Martinez, A., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. (2009) 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor. IEEE Transactions on Nanotechnology, 8(5), pp. 603-610. (doi: 10.1109/TNANO.2009.2020980)

Seoane, N., Martinez, A., Brown, A.R., Barker, J.R. and Asenov, A. (2009) Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study. IEEE Transactions on Electron Devices, 56(7), pp. 1388-1395. (doi: 10.1109/TED.2009.2021357)

2008

Watling, J. R., Brown, A. R., Ferrari, G., Barker, J. R., Bersuker, G., Zeitzoff, P. and Asenov, A. (2008) Impact of high-kappa gate stacks on transport and variability in nano-CMOS devices. Journal of Computational and Theoretical Nanoscience, 5(6), pp. 1072-1088.

Barker, J. R., Towie, E. and Watling, J. R. (2008) The influence of polarisation and image charges on Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon wrap-round gate MOSFETs - art. no. 012009. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing: Bristol, p. 12009. ISBN 1742-6588

Barker, J.R. (2008) 2D/3D NEGF modeling of the impact of random dopants/dopant aggregation in silicon nano-transistors. In: 2008 International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2008 : September 9-11, 2008, Yumoto Fujiya Hotel, Hakone, Japan. IEEE, pp. 337-340. ISBN 9781424417537

Barker, J.R. (2008) Quantum transport in mesoscopic semiconductor devices: Vortices, flows and atomistic effects. In: Danielewicz, P., Piecuch, P. and Zelevinsky, V. (eds.) Nuclei and Mesoscopic Physics. Series: AIP Conference Proceedings (995). American Institute of Physics: Melville, NY, pp. 104-114. ISBN 978-0-7354-0514-1

Barker, J.R. and Rodriguez-Salazar, F. (2008) Self-organizing smart dust sensors for planetary exploration. In: Workshop on Nanosensors: Self-Organization and Swarm Robotics, Boston, Massachusetts, USA, 14 Sept 2008,

Kalna, K., Martinez, A., Svizhenko, A., Anantram, M. P., Barker, J. R. and Asenov, A. (2008) NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs. Journal of Computational Electronics, 7(3), pp. 288-292. (doi: 10.1007/s10825-008-0212-8)

Martinez, A., Barker, J. R., Bescond, M., Brown, A. R. and Asenov, A. (2008) Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain - art. no. 012026. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing: Bristol, p. 12026. ISBN 1742-6588

Martinez, A., Barker, J. R., Svizhenko, A., Anantram, M. P., Bescond, M. and Asenov, A. (2008) Ballistic Quantum Simulators for Studying Variability in Nanotransistors. Journal of Computational and Theoretical Nanoscience, 5(12), pp. 2289-2310. (doi: 10.1166/jctn.2008.1201)

Martinez, A., Barker, J.R., Brown, A., Asenov, A. and Seoane, N. (2008) Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green's Function quantum transport simulations. In: nternational Conference on Simulation of Semiconductor Processes and Devices, 2008, Hakone, Japan, 9-11 Sept 2008, pp. 341-344. (doi: 10.1109/SISPAD.2008.4648307)

Martinez, A., Bescond, M., Brown, A., Barker, J. R. and Asenov, A. (2008) A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor. Journal of Computational Electronics, 7(3), pp. 359-362. (doi: 10.1007/s10825-008-0240-4)

Martinez, A., Kalna, K., Svizhenko, A., Anantram, M.P., Barker, J.R. and Asenov, A. (2008) Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach. Physica Status Solidi C, 5(1), pp. 47-51.

2007

Martinez, A., Barker, J.R., Asenov, A. , Svizhenko, A. and Anantram, M.P. (2007) Developing a full 3D NEGF simulator with random dopant and interface roughness. Journal of Computational Electronics, 6(1-3), pp. 215-218. (doi: 10.1007/s10825-006-0104-8)

Martinez, A., Bescond, M., Barker, J.R., Svizhenko, A., Anantram, M.P., Millar, C. and Asenov, A. (2007) A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs. IEEE Transactions on Electron Devices, 54(9), pp. 2213-2222. (doi: 10.1109/TED.2007.902867)

Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: Simulation of the impact of high-kappa dielectrics on mobility. Journal of Non-Crystalline Solids, 353, pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.004)

Martinez, A., Barker, J., Svizhenko, A., Anantram, M. and Asenov, A. (2007) The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study. IEEE Transactions on Nanotechnology, 6, pp. 438-445. (doi: 10.1109/TNANO.2007.899638)

Martinez, A., Kalna, K., Barker, J. and Asenov, A. (2007) A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach. Physica E: Low-Dimensional Systems and Nanostructures, 37, pp. 168-172. (doi: 10.1016/j.physe.2006.07.007)

2006

Barker, J.R., Martinez, A., Svizhenko, A., Anantram, A. and Asenov, A. (2006) Green function study of quantum transport in ultra-small devices with embedded atomistic clusters. Journal of Physics: Conference Series, 35, pp. 233-246. (doi: 10.1088/1742-6596/35/1/021)

Barker, J.R. and Watling, J.R. (2006) Atomistic scattering close to an interface. Journal of Physics: Conference Series, 38(1), pp. 204-207. (doi: 10.1088/1742-6596/38/1/049)

Barker, J.R., Watling, J.R. and Ferrari, G. (2006) SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs. Journal of Physics: Conference Series, 38(1), pp. 184-187. (doi: 10.1088/1742-6596/38/1/044)

Barker, J. and Watling, J. (2006) Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-k dielectric MOSFETs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 99-100.

Ferrari, G., Watling, J., Roy, S., Barker, J. and Asenov, A. (2006) Beyond SiO2 technology: The impact of high-k dielectrics. In: 6th symposium SiO2 , advanced dielectrics and related devices : SiO2006, Palermo, Italy,

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2 based oxides. In: E-MRS IUMRS ICEM 2006, Nice, France, Symposium.

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2-based oxides. Materials Science in Semiconductor Processing, 9, pp. 995-999. (doi: 10.1016/j.mssp.2006.10.035)

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) On the impact of high-k gate stacks on mobility: a Monte Carlo study including coupled SO phonon-plasmon scattering. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 111.

Martinez, A., Barker, J., Svizhenko, A., Anantram, A., Bescond, M. and Asenov, A. (2006) Development of a Full 3D NEGF Nano-CMOS simulator. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2006, California,USA,

Martinez, A., Kalna, K., Barker, J. and Asenov, A. (2006) A study of the interface roughness effects in Si-nanowires using a full 3D NEGF approach. In: E-MRS IUMRS ICEM 2006, Nice, France, Symposium.

Martinez, A., Barker, J.R., Anantram, A., Svizhenko, A. and Asenov, A. (2006) Developing a full 3D NEGF simulator with random dopant and interface roughness. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 215-218.

Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A. and Asenov, A. (2006) The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, p. 133.

Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R. and Asenov, A. (2006) A NEGF study of the effect of surface roughness on CMOS nanotransistors. Journal of Physics: Conference Series, 35(1), pp. 269-274. (doi: 10.1088/1742-6596/35/1/024)

Rodriguez-Salazar, F. and Barker, J. (2006) Hamming hypermeshes: High performance interconnection networks for pin-out limited systems. Performance Evaluation, 63, pp. 759-775. (doi: 10.1016/j.peva.2005.08.003)

2005

Barker, J. (2005) Physics at the scaling limit. In: Solid State Devices Meeting SSDM 2005, Kobe, Japan,

Barker, J. (2005) Quantum transport in nano-CMOS devices: the role of vortices. In: UNSPECIFIED, London, UK,

Barker, J. (2005) SO phonon scattering in high-k dielectrics: the role of phono-plasmon coupling. In: Material Modelling International Workshop, London, UK,

Barker, J., Martinez, A., Svizhenko, A., Anantram, M. and Asenov, A. (2005) Green function study of quantum transport in ultrasmall devices with embedded atomistic clusters. In: 3rd International Workshop on Progress in non-equilibrium Green functions, Kiel, Germany,

Barker, J. and Watling, J. (2005) Non-equlibrium dielectric response of high-k stacks in Si MOSFETs: application to SO interface phonon scattering. In: 3rd International Workshop on Progress in non-equilibrium Green functions, Kiel, Germany,

Barker, J., Watling, J., Brown, A., Roy, S., Zeitzoff, P., Bersuker, G. and Asenov, A. (2005) Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

Martinez, A., Barker, J., Svizhenko, A., Anantram, M., Brown, A., Biegel, B. and Asenov, A. (2005) The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFETS: Classical to full quantum simulation. In: New Phenomena in Mesoscopic Structures - 7 (NPMS) and the fifth in the series of Surfaces and Interfaces of Mesoscopic Devices (SIMD), NPMS-7/SIMD-5, Maui, Hawaii,

Martinez, A., Barker, J., Svizhenko, A., Bescond, M., Anantram, M. and Asenov, A. (2005) A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A. and Asenov, A. (2005) A study of the effect of interface roughness on DG MOSFET using full 2D NEGF technique. In: IEEE International Electron Device Meeting, Washington DC, USA, pp. 627-630.

Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A., Biegel, B. and Asenov, A. (2005) Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF simulation study. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan, pp. 76-77.

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance. In: Advanced Gate Stack Engineering Conference, Texas, USA,

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) Transport in the presence of high-k dielectrics. In: Material Modelling International Workshop, London, UK,

Watling, J., Brown, A., Alexander, C., Ferrari, G., Barker, J., Bersuker, G., Zeitzoff, P. and Asenov, A. (2005) Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides. In: 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA,

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5, pp. 103-108. (doi: 10.1109/TDMR.2005.845238)

Yang, L., Watling, J., Barker, J. and Asenov, A. (2005) The impact of soft-optical phonon scattering due to high-kappa dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs. In: Physics of Semiconductors AIP Conference Proceedings, Melville, pp. 1497-1498. ISBN 0094-243X

2004

Barker, J. (2004) Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering. Semiconductor Science and Technology, 19, S56-S59. (doi: 10.1088/0268-1242/19/4/021)

Barker, J. (2004) Quantised vortex flows and conductance fluctuations in high temperature atomistic silicon MOSFET devices. In: Proceedings 27th International Conference on Physics of Semiconductors, ICPS04, Arizona, USA,

Barker, J. (2004) Quantum fluctuations in atomistic silicon and silicon-germanium semiconductor MOSFET devices. In: IoP Condensed Matter and Materials Physics Conference CMMP04, Warwick, UK, p. 98.

Barker, J. and Barmpoutis, A. (2004) Smart-dust Monte Carlo simulation of self-organised transport. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA,

Barker, J. and Martinez, A. (2004) Vortex flows in semiconductor device quantum channels: time-dependent simulation. In: International workshop on Computational Electronics, IWCE-10, West Lafeyette, USA,

Borici, M., Watling, J., Wilkins, R., Yang, L., Barker, J. and Asenov, A. (2004) Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs. Semiconductor Science and Technology, 19, S155-S157. (doi: 10.1088/0268-1242/19/4/054)

Rodriguez-Salazar, F. and Barker, J. (2004) Hilbert Graph : an expandable interconnection network for clusters. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA,

Rodriguez-Salazar, F. and Barker, J. (2004) Linear feedback shift register interconncetion networks. In: Proceedings of the 2004 workshop on Massively Parallel Processing - IPDPS 2004, New Mexico, USA,

Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R. and Roy, S. (2004) The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electronics, 48, pp. 1337-1346. (doi: 10.1016/j.sse.2004.01.015)

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2004) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs. In: International workshop on electrical characterization and reliability of high-k devices, Austin, USA,

Watling, J., Yang, L., Barker, J. and Asenov, A. (2004) The impact of high-k dielectrics on the future performance of nano-scale MOSFETs. In: IoP Condensed Matter and Materials Physics Conference CMMP04, Warwick, UK,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi: 10.1016/j.microrel.2004.04.003)

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Scaling study of Si and strained Si n-MOSFETs with different high k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, USA,

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Simulations of sub-100nm strained Si MOSFETs with high k gate stacks. In: International workshop on Computational Electronics, IWCE-10, West Lafeyette, USA,

Yang, L., Watling, J., Asenov, A. and Barker, J. (2004) Performance degradation due to soft optical phonon scattering in conventional and strained Si MOSFETs with high-k gate dielectrics. In: 34th European Solid-State Device research Conference, ESSDERC, Leuven, Belgium,

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Mobility and device performance in conventional and strained Si MOSFETs with high-k stack. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Munich, Germany, pp. 199-202.

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Sub-100nm strained Si CMOS : Device performance and circuit behavior. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China,

Yang, L., Watling, J., Barker, J. and Asenov, A. (2004) The impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-1oonm conventional and strained Si n-MOSFETs. In: 27th International Conference on Physics of Semiconductors, ICPS04, Arizona, USA,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs. In: Condensed Matter and Materials Physcis Conference - CMMP04, Warwick, UK,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A. and Roy, S. (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19, pp. 1174-1182.

2003

Barker, J.R. (2003) Bohm trajectories in quantum transport. In: Bonitz, M. and Semkat, D. (eds.) Proceedings of the Conference, Progress in Nonequilibrium Green's Functions, Dresden, Germany, 19-23 August 2002. World Scientific Publishing: Singapore, pp. 198-213. ISBN 9789812382719

Barker, J. (2003) Atomistic effects in the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions. In: International Conference NANOMES 3, Tempe, Arizona, USA,

Barker, J. (2003) Green function simulation study of non self-averaging scattering processes atomistic semiconductor devices. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

Barker, J. (2003) Non-equilibrium quantum transport infinite devices structures in the presence of non-self-averaged atomistic impurity scattering. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Barker, J. (2003) Quantum fluctuations in atomistic semiconductor devices. Superlattices and Microstructures, 34, pp. 361-366. (doi: 10.1016/j.spmi.2004.03.028)

Barker, J. (2003) Quantum hydrodynamics of normal vortices in open semiconductor quantum dots. In: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, ISBN 0750309245

Barker, J. (2003) A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions. Physica E: Low-Dimensional Systems and Nanostructures, 19, pp. 62-70. (doi: 10.1016/S1386-9477(03)00292-3)

Borici, M., Watling, J., Wilkins, R. and Barker, J. (2003) Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

Yang, L., Watling, J., Borici, M., Wilkins, R., Asenov, A., Barker, J. and Roy, S. (2003) Simulation of scaled sub-100nm strained Si p-channel MOSFETs. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

2002

Barker, J. (2002) Normal vortex states and their application in mesoscopic semiconductor devices. Microelectronic Engineering, 63, pp. 223-231.

Barker, J. and Watling, J. (2002) Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach. Microelectronic Engineering, 63, pp. 97-103.

Prest, M.J. et al. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89, pp. 444-448.

Yang, L., Watling, J., Wilkins, R., Asenov, A., Barker, J., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MOSFETs for RF applications. In: 10th International Symposium on Electron Devices for Microwave and Optoelectronic Devices ( EDMO 2002), Manchester, UK, pp. 101-106.

2001

Barker, J.R. (2001) A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices. VLSI Design, 13, pp. 237-244.

Barker, J.R. and Watling, J.R. (2001) Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices. VLSI Design, 13, pp. 453-458.

Barker, J.R., Watling, J.R. and Wilkins, R.C.W. (2001) A fast algorithm for the study of wave-packet scattering at disordered interfaces. VLSI Design, 13, pp. 199-204.

Palmer, M. et al. (2001) Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs - predictions for deep submicron devices. In: Proceeding ESSDERC 2001 - Edition Frontiers, Nuremberg, Germany, pp. 199-202.

Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2001) Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. VLSI Design, 13, pp. 169-173.

2000

Watling, J.R., Barker, J.R. and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 159-160. ISBN 0852617046 (doi: 10.1109/IWCE.2000.869974)

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Articles

Martinez, A. and Barker, J. R. (2020) Quantum transport in a silicon nanowire FET transistor: hot electrons and local power dissipation. Materials, 13(15), 3326. (doi: 10.3390/ma13153326)