Professor Andrew Long
- Honorary Senior Research Fellow (School of Physics & Astronomy)
email:
Andrew.Long@glasgow.ac.uk
R308 Level 3, Physics & Astronomy, Kelvin Building, Glasgow G12 8QQ
Research interests
Personal webpage: http://www.ssp.gla.ac.uk/Group/people.php?person=along
My early research work was in the the use of superconducting tunnel junctions as phonon transducers. After coming to Glasgow, I studied amorphous semiconductors for many years, specialising in hopping and particularly in frequency dependent losses (in which I retain an interest). About 1990 I joined the Nanoelectronics Research Centre to work on semiconductor nanostructures and nanoelectronics. After my retirement in 2012, I shall be working on problems remaining from my active research years.
Publications
2012
Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi: 10.1063/1.3702468)
Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. , Ahn, J., Long, R.D., McIntyre, P.C. and Long, A.R. (2012) Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 111(10), p. 104112. (doi: 10.1063/1.4720940)
2011
Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics. Journal of Applied Physics, 110(5), 054103. (doi: 10.1063/1.3631076)
Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi: 10.1109/ted.2011.2111420)
Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi: 10.1063/1.3599895)
Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi: 10.1063/1.3665720)
2010
Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi: 10.1016/j.sse.2009.11.008)
2009
Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi: 10.1016/j.mee.2008.01.043)
Oxland, R.K., Long, A.R. and Rahman, F. (2009) Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi: 10.1016/j.mee.2009.05.007)
2008
Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi: 10.1063/1.3029661)
Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi: 10.1109/ASDAM.2008.4743354)
2007
Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi: 10.1116/1.2778690)
Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi: 10.1116/1.2738480)
Moran, D. A. J. et al. (2007) III-V Enhancement Mode MOSFETs for Digital Applications. In: IBM MRC Oxide Workshop, Zurich, Switzerland, 25-27 June 2007,
Moran, D. A. J. et al. (2007) High Performance Enhancement-Mode III-V MOSFETs. In: UK Compound Semiconductor Conference 2007, Sheffield, UK, 2007,
Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.
Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,
2006
Paterson, G.W. , Wilson, J.A., Moran, D. , Hill, R., Long, A.R., Thayne, I. , Passlack, M. and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135(3), pp. 277-281. (doi: 10.1016/j.mseb.2006.08.026)
Long, A.R., Pioro-Ladriere, M., Davies, J.H. , Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S.A. (2006) The origin of switching noise in GaAs/AlGaAs lateral gated devices. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 553-556. (doi: 10.1016/j.physe.2006.03.118)
McMullen, T., Davies, J.H. and Long, A.R. (2006) Additional resistance in periodically modulated two-dimensional electron systems - quantum mechanical or semi-classical? Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 564-567. (doi: 10.1016/j.physe.2006.03.032)
Wilson, J.A., MacKenzie, M., MacFadzean, S., McMullen, T., Hamill, S., Stopford, P., Holland, M.C., Stanley, C.R. and Long, A.R. (2006) Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin. Physica Status Solidi A: Applications and Materials Science, 203(3), pp. 628-637. (doi: 10.1002/pssa.200521287)
2005
Pioro-Ladriere, M., Davies, J.H. , Long, A.R., Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S. (2005) Origin of switching noise in GaAs/AlxGa1-xAs lateral gated devices. Physical Review B, 72(11), p. 115331. (doi: 10.1103/PhysRevB.72.115331)
2004
McMullen, T., Skuras, E., Kirk, K.J., Davies, J.H. and Long, A.R. (2004) The 2DEG as a non-invasive tool for determining the switching behaviour in cobalt needle arrays. Physica E: Low-Dimensional Systems and Nanostructures, 22(1-3), pp. 745-748. (doi: 10.1016/j.physe.2003.12.114)
Vasilopoulos, P., Wang, X.F., Peeters, F.M., Chowdhury, S., Long, A.R. and Davies, J.H. (2004) Magneto resistance oscillations in a modulated 2DEG periodic in the ratio h/e to flux per unit cell. Physica E: Low-Dimensional Systems and Nanostructures, 22(1-3), pp. 389-393. (doi: 10.1016/j.physe.2003.12.028)
Chowdhury, S., Long, A.R., Skuras, E., Davies, J.H. , Lister, K., Pennelli, G. and Stanley, C.R. (2004) Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral surface superlattices. Physical Review B, 69(3), art 035330. (doi: 10.1103/PhysRevB.69.035330)
2003
Kirk, K.J., McVitie, S. , Long, A.R. and Skuras, E. (2003) Magnetization of Co elements sensed by semiconductor transport magnetometry and transmission electron microscopy. Journal of Applied Physics, 93(10), 7906 -7908. (doi: 10.1063/1.1557825)
2001
Abd-El Mongy, A., Belal, A.A.E., Ali, K. and Long, A.R. (2001) Characteristics of gated GaAs/Al/ 0.3Ga/ 0.7As heterostructures. Physica Status Solidi A, 187(2), 575 -583. (doi: 10.1002/1521-396X(200110)187:2<575::AID-PSSA575>3.0.CO;2-2)
Abd-El Mongy, A., Long, A.R., Belal, E. and Ali, K. (2001) Commensurability oscillations on lateral surface superlattices with large periods. Thin Solid Films, 396(1-2), pp. 220-225. (doi: 10.1016/S0040-6090(01)01231-7)
Chowdhury, S., Long, A.R., Skuras, E., Emeleus, C.J. and Davis, J.H. (2001) Transport of electrons in two-dimensional square and rectangular lateral surface superlattices. Journal of the Korean Physical Society, 39(3), 529 -533.
Skuras, E., Long, A.R., Chowdhury, S., Boyd, E., Rahman, M., Kirk, K.J. and Davies, J. (2001) Anisotropy effects in two-dimensional magnetic superlattices. Journal of the Korean Physical Society, 39(3), 544 -548.
Skuras, E., Long, A.R., Chowdhury, S., Rahman, M., Kirk, K.J. and Davies, J.H. (2001) Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas. Journal of Applied Physics, 90(5), 2623 -2625. (doi: 10.1063/1.1388574)
Skuras, E., Pennelli, G., Long, A.R. and Stanley, C.R. (2001) Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1524 -1528. (doi: 10.1116/1.1379793)
Chowdhury, S., Skuras, E., Emeleus, C.J., Long, A.R., Davies, J.H., Pennelli, G. and Stanley, C.R. (2001) Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlattices. Physical Review B, 63(15), p. 153306. (doi: 10.1103/PhysRevB.63.153306)
Abd-El Mongy, A., Belal, A.A.E., Ali, K. and Long, A.R. (2001) Characteristics of gated GaAs/Al0.3Ga0.7As heterostructures. Physica Status Solidi A: Applied Research, 187, pp. 575-583.
2000
Cusco, R., Artus, L., Ibanez, J., Blanco, N., Gonzalez-Diaz, G., Rahman, M. and Long, A.R. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88(11), 6567 -6570. (doi: 10.1063/1.1322593)
Chowdhury, S., Emeleus, C.J., Milton, B., Skuras, E., Long, A.R., Davies, J.H., Pennelli, G. and Stanley, C.R. (2000) Importance of symmetry breaking in two-dimensional lateral-surface superlattices. Physical Review B, 62(8), 4821 -4824. (doi: 10.1103/PhysRevB.62.R4821)
Grant, D.E., Long, A.R. and Davies, J.H. (2000) Commensurability oscillations due to pinned and drifting orbits in a two-dimensional lateral surface superlattice. Physical Review B, 61(19), 13127 -13130. (doi: 10.1103/PhysRevB.61.13127)
Milton, B.,, Emeleus, C.J., Lister, K., Davies, J.H. and Long, A.R. (2000) Modulation of Landau levels by a one-dimensional periodic potential. Physica E: Low-Dimensional Systems and Nanostructures, 6(1-4), 555 -557. (doi: 10.1016/S1386-9477(99)00107-1)
Articles
Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi: 10.1063/1.3702468)
Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. , Ahn, J., Long, R.D., McIntyre, P.C. and Long, A.R. (2012) Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 111(10), p. 104112. (doi: 10.1063/1.4720940)
Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics. Journal of Applied Physics, 110(5), 054103. (doi: 10.1063/1.3631076)
Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi: 10.1109/ted.2011.2111420)
Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi: 10.1063/1.3599895)
Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi: 10.1063/1.3665720)
Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi: 10.1016/j.sse.2009.11.008)
Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi: 10.1016/j.mee.2008.01.043)
Oxland, R.K., Long, A.R. and Rahman, F. (2009) Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi: 10.1016/j.mee.2009.05.007)
Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi: 10.1063/1.3029661)
Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi: 10.1116/1.2778690)
Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi: 10.1116/1.2738480)
Paterson, G.W. , Wilson, J.A., Moran, D. , Hill, R., Long, A.R., Thayne, I. , Passlack, M. and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135(3), pp. 277-281. (doi: 10.1016/j.mseb.2006.08.026)
Long, A.R., Pioro-Ladriere, M., Davies, J.H. , Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S.A. (2006) The origin of switching noise in GaAs/AlGaAs lateral gated devices. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 553-556. (doi: 10.1016/j.physe.2006.03.118)
McMullen, T., Davies, J.H. and Long, A.R. (2006) Additional resistance in periodically modulated two-dimensional electron systems - quantum mechanical or semi-classical? Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), pp. 564-567. (doi: 10.1016/j.physe.2006.03.032)
Wilson, J.A., MacKenzie, M., MacFadzean, S., McMullen, T., Hamill, S., Stopford, P., Holland, M.C., Stanley, C.R. and Long, A.R. (2006) Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin. Physica Status Solidi A: Applications and Materials Science, 203(3), pp. 628-637. (doi: 10.1002/pssa.200521287)
Pioro-Ladriere, M., Davies, J.H. , Long, A.R., Sachrajda, A.S., Gaudreau, L., Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z. and Studenikin, S. (2005) Origin of switching noise in GaAs/AlxGa1-xAs lateral gated devices. Physical Review B, 72(11), p. 115331. (doi: 10.1103/PhysRevB.72.115331)
McMullen, T., Skuras, E., Kirk, K.J., Davies, J.H. and Long, A.R. (2004) The 2DEG as a non-invasive tool for determining the switching behaviour in cobalt needle arrays. Physica E: Low-Dimensional Systems and Nanostructures, 22(1-3), pp. 745-748. (doi: 10.1016/j.physe.2003.12.114)
Vasilopoulos, P., Wang, X.F., Peeters, F.M., Chowdhury, S., Long, A.R. and Davies, J.H. (2004) Magneto resistance oscillations in a modulated 2DEG periodic in the ratio h/e to flux per unit cell. Physica E: Low-Dimensional Systems and Nanostructures, 22(1-3), pp. 389-393. (doi: 10.1016/j.physe.2003.12.028)
Chowdhury, S., Long, A.R., Skuras, E., Davies, J.H. , Lister, K., Pennelli, G. and Stanley, C.R. (2004) Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral surface superlattices. Physical Review B, 69(3), art 035330. (doi: 10.1103/PhysRevB.69.035330)
Kirk, K.J., McVitie, S. , Long, A.R. and Skuras, E. (2003) Magnetization of Co elements sensed by semiconductor transport magnetometry and transmission electron microscopy. Journal of Applied Physics, 93(10), 7906 -7908. (doi: 10.1063/1.1557825)
Abd-El Mongy, A., Belal, A.A.E., Ali, K. and Long, A.R. (2001) Characteristics of gated GaAs/Al/ 0.3Ga/ 0.7As heterostructures. Physica Status Solidi A, 187(2), 575 -583. (doi: 10.1002/1521-396X(200110)187:2<575::AID-PSSA575>3.0.CO;2-2)
Abd-El Mongy, A., Long, A.R., Belal, E. and Ali, K. (2001) Commensurability oscillations on lateral surface superlattices with large periods. Thin Solid Films, 396(1-2), pp. 220-225. (doi: 10.1016/S0040-6090(01)01231-7)
Chowdhury, S., Long, A.R., Skuras, E., Emeleus, C.J. and Davis, J.H. (2001) Transport of electrons in two-dimensional square and rectangular lateral surface superlattices. Journal of the Korean Physical Society, 39(3), 529 -533.
Skuras, E., Long, A.R., Chowdhury, S., Boyd, E., Rahman, M., Kirk, K.J. and Davies, J. (2001) Anisotropy effects in two-dimensional magnetic superlattices. Journal of the Korean Physical Society, 39(3), 544 -548.
Skuras, E., Long, A.R., Chowdhury, S., Rahman, M., Kirk, K.J. and Davies, J.H. (2001) Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas. Journal of Applied Physics, 90(5), 2623 -2625. (doi: 10.1063/1.1388574)
Skuras, E., Pennelli, G., Long, A.R. and Stanley, C.R. (2001) Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1524 -1528. (doi: 10.1116/1.1379793)
Chowdhury, S., Skuras, E., Emeleus, C.J., Long, A.R., Davies, J.H., Pennelli, G. and Stanley, C.R. (2001) Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlattices. Physical Review B, 63(15), p. 153306. (doi: 10.1103/PhysRevB.63.153306)
Abd-El Mongy, A., Belal, A.A.E., Ali, K. and Long, A.R. (2001) Characteristics of gated GaAs/Al0.3Ga0.7As heterostructures. Physica Status Solidi A: Applied Research, 187, pp. 575-583.
Cusco, R., Artus, L., Ibanez, J., Blanco, N., Gonzalez-Diaz, G., Rahman, M. and Long, A.R. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88(11), 6567 -6570. (doi: 10.1063/1.1322593)
Chowdhury, S., Emeleus, C.J., Milton, B., Skuras, E., Long, A.R., Davies, J.H., Pennelli, G. and Stanley, C.R. (2000) Importance of symmetry breaking in two-dimensional lateral-surface superlattices. Physical Review B, 62(8), 4821 -4824. (doi: 10.1103/PhysRevB.62.R4821)
Grant, D.E., Long, A.R. and Davies, J.H. (2000) Commensurability oscillations due to pinned and drifting orbits in a two-dimensional lateral surface superlattice. Physical Review B, 61(19), 13127 -13130. (doi: 10.1103/PhysRevB.61.13127)
Milton, B.,, Emeleus, C.J., Lister, K., Davies, J.H. and Long, A.R. (2000) Modulation of Landau levels by a one-dimensional periodic potential. Physica E: Low-Dimensional Systems and Nanostructures, 6(1-4), 555 -557. (doi: 10.1016/S1386-9477(99)00107-1)
Conference or Workshop Item
Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.
Conference Proceedings
Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi: 10.1109/ASDAM.2008.4743354)
Moran, D. A. J. et al. (2007) III-V Enhancement Mode MOSFETs for Digital Applications. In: IBM MRC Oxide Workshop, Zurich, Switzerland, 25-27 June 2007,
Moran, D. A. J. et al. (2007) High Performance Enhancement-Mode III-V MOSFETs. In: UK Compound Semiconductor Conference 2007, Sheffield, UK, 2007,
Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,
