Professor Vihar Georgiev

Professor of Nanoelectronics (Electronic & Nanoscale Engineering)

telephone: +44 (0)0141 330 7659
email: Vihar.Georgiev@glasgow.ac.uk

Room 702, Level 7, Rankine Building, School of Engineering, G12 8LT

Biography

I am a Professor of Nanoelectronics, the leader of DeepNano Group at University of Glasgow and an EPSRC UKRI Innovation Fellow.I am also a Visiting Professor at TU Vienna. From 2015 until January 2024 I was a co-Leader of the Device Modelling Group. DeepNano Group was founded on 1st of January 2024. The aim of the group is to continue the research in modeling and simulations areas of electronic devices by combining not only analytical and numerical approaches but also machine learning and artificial intelligence methods. The DeepNano Group research activities are focused on the modeling and simulation of nanoscale devices for advanced optoelectronics, biosensors and quantum applications. Our projects are in collaboration with leading experimental groups, such as IBM, STMicroelectronics, IMEC, Synopsys and Synopsys QuantumATK. Our group collaborates with academic groups not only in UK but also from USA, China, South Korea, India, Japan, Austria, Switzerland, Spain, France, Italy, Poland, Germany and Bulgaria. We are supporting open science practices and we are happy to collaborate with everyone interested in our work.

Videos

Idea Summit Video

Jumbo Radio Interview

DeepNano Group Video

Track record

I have more than 10 years of experience of developing numerical solvers and machine learning methods that are used for modelling and simulations of various semiconductor devices, such as nanowire transistors, tunnelling FETs, molecular flash memories and bio-sensors not only on IV and III-V semiconductor but also molecules, carbon nanotubes and Josephson’s junctions. Until 2022, I participated in 12 European and UK projects in total. From 2018 until 2022 I had an EPSRC Industrial Fellowship called Quantum Simulator for Entangled Electronics (EP/S001131/1) and currently I am a co-PI of three more EPSRC projects (EP/T023244/1, EP/V032627/1 and EP/V048341/1). Moreover, I am a PI of two EU H2020 projects. The first one is a H2020-FetOPEN-2019 project called ElectroMed and the second one is a MSCA-ITN-2019 project called DESIGN-EID where I am also a project coordinator. Since my appointment as a Lecturer in 2015, I have secured funding of around £1.3M as a PI and around £5.0M as a co-PI. Apart from my academic achievements I was a Quantum Simulation and Business Development Adviser at Semiwise and VP Business Development and Quantum technology at Advanced Microelectronics Associates. At the moment I am a Chair of the Industry Advisory Board and Senior Adivisor of Study at School of Engineering.

I am a member of the EPSRC College, member of the Royal Society grant committees and reviews proposals for the European Commission, the Czech Science Foundation (HRZZ), the Swiss National Science Foundation (SNSF), Science Foundation of Ireland, ETH, Israel Science Foundation and Bulgarian Academy of Science. I am a Senior Member of IEEE and a Fellow of Higher Education Academy (FHEA). I am an associate editor of the IET Electronic Letters journal (2018–), guest editor of the Journal of Computational Electronics (2022) and IEEE Access (2019). At University of Glasgow, I am Chair of Industry Advisory Board, Senior Adviser of Study, ENE representative at IT committee and from 2015-2022 I was PGR convener.

I have contributed to research communities as a member of Technical Programme Committee (TPC) of the following conferences and workshops: 2023: DATE’23 (Antwerp, Belgium); TPC member SISPAD’23 (Kobe, Japan); 2022: 9^th SiNANO Modelling and Simulation Summer School (Main Organiser and Program Chair, Glasgow, UK); Quantum Transport Methods and Algorithms: From Particle to Waves approaches (Co-Organiser and Program Chair, Zurich, Switzerland), E-MRS’22 Fall workshop “Group-IV semiconductor materials for nanoelectronics and cryogenic electronics” (Co-Organiser and Program Chair, Warsaw, Poland), Session chair DATE’22 (Antwerp, Belgium); 2021: NMDC’21 (Vancouver, Canada); IWCN’21 (online), DATE’21 (online), IEEE Nano 2020 (online); 2019: Session chair and TPC member IEDM’19 (San Francisco, USA), IEEE NMDC’19 (Nanjing, China), 2018: TPC member IEDM’18 (San Francisco, USA), IEEE NMDC’18 (Portland, USA). I have been an external examiner for multiple Ph.D. theses, including students at Imperial College London, University of Edinburgh, University of Lancaster, University of Granada and ETH Zürich.

POSITIONS

2023 – Chair of Industrial Advisory Board at School of Engineering , University of Glasgow, UK

2022 – Deputy Head of Electronics and Nanoscale Engineering (ENE) Division, University of Glasgow, UK

2022 – Professor of Nanoelectronics, University of Glasgow, UK

2020 – 2024 Quantum Simulation and Business Development Adviser at SemiWise, UK

2019 – 2022 Senior Lecturer (Associate Professor), University of Glasgow, UK

2015 – 2019 Lecturer (Assistant Professor), University of Glasgow, UK

2012 – 2015 Postdoctoral Researcher, University of Glasgow, UK

EDUCATION

2017-19 Recognising Excellence in Teaching Fellowship, University of Glasgow, UK

2007-11 Ph.D. (DPhil) in Computational Chemistry, Linacre College, University of Oxford, UK

2005-06 MSc in Computational Chemistry, Sofia University, Bulgaria

2000-04 BSc in Chemistry, Sofia University, Bulgaria

Research interests

Research Interests

Transport in mesoscopic systems
Quantum chemistry
Molecular electronics and sensors
Transition-metal and organometallic chemistry
Material science
Nano-bio sensor
Machine learning and artificial intelligence

Expertise

Semiconductors
Semiconductor devices
Advanced CMOS technology, devices and design
Computational chemistry
Device modeling and Simulations
Material modeling

Publications

Selected publications

Dam Vedel, C., Smidstrup, S. and Georgiev, V. P. (2022) First-principles investigation of polytypic defects in InP. Scientific Reports, 12, 19724. (doi: 10.1038/s41598-022-24239-w) (PMID:36385159) (PMCID:PMC9669039)

Lapham, P. and Georgiev, V. (2022) Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction. Nanotechnology, 33(26), 265201. (doi: 10.1088/1361-6528/ac5f2e) (PMID:35303731)

Dhar, R., Kumar, N. , Pascual Garcia, C. and Georgiev, V. (2022) Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application. Solid-State Electronics, 195, 108374. (doi: 10.1016/j.sse.2022.108374)

Lapham, P., Vilà-Nadal, L. , Cronin, L. and Georgiev, V. P. (2021) Influence of the contact geometry and counterions on the current flow and charge transfer in polyoxometalate molecular junctions: a density functional theory study. Journal of Physical Chemistry C, 125(6), pp. 3599-3610. (doi: 10.1021/acs.jpcc.0c11038) (PMID:33633816) (PMCID:PMC7899180)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Carrillo-Nuñez, H., Medina-Bailón, C., Georgiev, V. P. and Asenov, A. (2020) Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach. Nanotechnology, 32(2), 020001. (doi: 10.1088/1361-6528/abacf3) (PMID:32759487)

Carrillo-Nunez, H., Dimitrova, N., Asenov, A. and Georgiev, V. (2019) Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors. IEEE Electron Device Letters, 40(9), pp. 1366-1369. (doi: 10.1109/LED.2019.2931839)

Carrillo-Nuñez, H., Mirza, M. M. , Paul, D. J. , MacLaren, D. A. , Asenov, A. and Georgiev, V. P. (2018) Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors. IEEE Transactions on Electron Devices, 65(5), pp. 1692-1698. (doi: 10.1109/TED.2018.2817919)

Georgiev, V. P. , Mirza, M. M. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16(5), pp. 727-735. (doi: 10.1109/TNANO.2017.2665691)

Liang, J. et al. (2017) A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects. In: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 02-06 Dec 2017, 35.5.1-35.5.4. ISBN 9781538635599 (doi: 10.1109/IEDM.2017.8268502)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi: 10.1038/nature13951) (PMID:25409147)

Georgiev, V.P. , Towie, E.A. and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi: 10.1109/TED.2013.2238944)

All publications

List by: Type | Date

Jump to: 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2004

Number of items: 164.

2024

Gandhi, N., Rathore, S., Jaisawal, R. K., Kondekar, P. N., Kumar, N. , Dixit, A. , Georgiev, V. and Bagga, N. (2024) Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 24-27 September 2024, ISBN 9798331516352 (doi: 10.1109/SISPAD62626.2024.10733257)

Kumar, N. , García, C. P., Dixit, A. and Georgiev, V. (2024) Understanding the dynamic perturbative behaviour of Electrolyte-Gated FET Based Biosensors with Immobilised Nanoparticles. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 24-27 September 2024, ISBN 9798331516352 (doi: 10.1109/SISPAD62626.2024.10733212)

Xue, L., Dixit, A. , Kumar, N. , Georgiev, V. and Liu, B. (2024) Machine Learning-Assisted Device Circuit Co-optimization: A Case Study on Inverter. IEEE Transactions on Electron Devices, (Accepted for Publication)

Dutta, T. , Adamu-Lema, F., Xeni, N., Rezaei, A. , Dixit, A. , Topaloglu, I. , Georgiev, V. and Asenov, A. (2024) Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024, (Accepted for Publication)

Dixit, A. , Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V. (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)

Jacobs, J., Vila-Nadal, L. and Georgiev, V. (2024) Atomistic modeling of [W18O54(SeO3)2]4- polyoxometalates (POM) molecules in the presence of counter-cations. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 141-145. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628858)

Martinez-Oliver, C., Scherrer, M., Iadanza, S., Schmid, H., Moselund, K. and Georgiev, V. (2024) Simulation and fabrication of monolithic III-V photodetectors on Si: the role of growth facets and localization of heterojunctions. IEEE Transactions on Electron Devices, (doi: 10.1109/TED.2024.3437333) (Early Online Publication)

Kumar, N. , Aleksandrov, P. , Gao, Y., Macdonald, C. , García, C. P. and Georgiev, V. (2024) Combinations of analytical and machine learning methods in a single simulation framework for amphoteric molecules detection. IEEE Sensors Letters, 8(7), 1501004. (doi: 10.1109/LSENS.2024.3408101)

Kumar, P., Kumar, N. , Dixit, A. , Bagga, N., Dasgupta, S. and Georgiev, V. (2024) Steep-subthreshold bilayer tunnel field effect transistor based efficient pH sensing: performance characterisation and optimization. IEEE Sensors Letters, (doi: 10.1109/LSENS.2024.3419581) (Early Online Publication)

Gandhi, N., Rathore, S., Jaisawal, R. K., Kondekar, P. N., Kumar, N. , Dixit, A. , Georgiev, V. and Bagga, N. (2024) Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor. In: 2024 IEEE Latin American Electron Devices Conference (LAEDC), Guatemala City, Guatemala, 08-10 May 2024, ISBN 9798350361292 (doi: 10.1109/laedc61552.2024.10555835)

Kumar, N. , Dhar, R. P., El Maiss, J., Georgiev, V. and García, C. P. (2024) Discovery of amphoteric fingerprints of amino acids with field-effect transistors. IEEE Access, (doi: 10.1109/ACCESS.2024.3411168) (Early Online Publication)

Kumar, P., Kumar, N. , Dixit, A. , Bagga, N., Dasgupta, S. and Georgiev, V. (2024) Low-voltage feedback field effect transistor based ion-sensing: a novel and detailed investigation for energy-efficient pH sensor. IEEE Sensors Letters, 8(6), 2000604. (doi: 10.1109/LSENS.2024.3403052)

Shashank, M., Liu, F., Shakthivel, D., Rai, B. and Georgiev, V. (2024) Molecular dynamics simulation based study to analyse the properties of entrapped water between gold and graphene 2D interface. Nanoscale Advances, 6(9), pp. 2371-2379. (doi: 10.1039/D3NA00878A) (PMID:38694470) (PMCID:PMC11059550)

Shukla, R. P. et al. (2024) Rational design of a planar junctionless field-effect transistor for sensing biomolecular interactions. Proceedings, 97(1), 121. (doi: 10.3390/proceedings2024097121)

Brugnolotto, E., Aleksandrov, P. , Sousa, M. and Georgiev, V. (2024) Machine learning inspired nanowire classification method based on nanowire array scanning electron microscope images. Open Research Europe, 4, 43. (doi: 10.12688/openreseurope.16696.1)

Mishra, S. , Nair, N. M. , Khandelwal, G. , Rai, B. and Georgiev, V. (2024) Capacitive-triboelectric based hybrid sensor system for human-like tactile perception. IEEE Sensors Letters, 8(2), 5500404. (doi: 10.1109/LSENS.2024.3351692)

2023

Kumar, N. , Dixit, A. , Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Kumar, N. , Pascual García, C., Dixit, A. , Rezaei, A. and Georgiev, V. (2023) Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based electrolyte-gated sensor. Solid-State Electronics, 210, 108789. (doi: 10.1016/j.sse.2023.108789)

Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A. , Kumar, N. , Georgiev, V. and Bagga, N. (2023) Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor. In: 2023 IEEE SENSORS, Vienna, Austria, 29 Oct - 01 Nov 2023, ISBN 9798350303872 (doi: 10.1109/SENSORS56945.2023.10324885)

Mishra, S. , John, D. A., Kumar, N. , Rai, B. and Georgiev, V. (2023) Human-Inspired Stretch and Joint-Bend Sensing System Based on Flexible Sensors. In: IEEE Sensors 2023, Vienna, Austria, 29 Oct - 01 Nov 2023, ISBN 9798350303872 (doi: 10.1109/SENSORS56945.2023.10325250)

Aleksandrov, P. , Rezaei, A. , Xeni, N., Dutta, T. , Asenov, A. and Georgiev, V. (2023) Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 169-172. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319587)

Kumar, N. , García, C. P., Rezaei, A. , Dixit, A. , Asenov, A. and Georgiev, V. (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 377-380. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319578)

Li, W., Wolff, N., Samuel, A. K., Wang, Y., Georgiev, V. P. , Kienle, L. and Ganin, A. (2023) Unlocking high-performance supercapacitor behavior and sustained chemical stability of 2D metallic CrSe2 by optimal electrolyte selection. ChemElectroChem, 10(21), e202300428. (doi: 10.1002/celc.202300428)

Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design, 23(11), pp. 8034-8042. (doi: 10.1021/acs.cgd.3c00806)

Kumar, N. , García, C. P., Dixit, A. , Rezaei, A. and Georgiev, V. (2023) Novel Detection Methodology of Milk-Oligopeptides Fingerprints using Ion-Sensitive BioFET. In: 2023 IEEE BioSensors Conference (BioSensors), London, UK, 30 July - 1 August 2023, ISBN 9798350346046 (doi: 10.1109/BioSensors58001.2023.10281172)

Aleksandrov, P. , Rezaei, A. , Dutta, T. , Xeni, N., Asenov, A. and Georgiev, V. (2023) Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor. IEEE Transactions on Electron Devices, 70(10), pp. 5448-5453. (doi: 10.1109/TED.2023.3306319)

Dam Vedel, C., Gunst, T., Smidstrup, S. and Georgiev, V. P. (2023) Shockley-Read-Hall recombination and trap levels in In 0.53Ga 0.47As point defects from first principles. Physical Review B, 108, 094113. (doi: 10.1103/PhysRevB.108.094113)

Medina Bailon, C., Nedjalkov, M., Georgiev, V. , Selberherr, S. and Asenov, A. (2023) Comprehensive mobility study of silicon nanowire transistors using multi-subband models. Nano Express, 4, 025005. (doi: 10.1088/2632-959X/acdb8a)

Kumar, N. , Dhar, R. P. S., Pascual Garcia, C. and Georgiev, V. (2023) A novel computational framework for simulations of bio-field effect transistors. ECS Transactions, 111(1), pp. 249-260. (doi: 10.1149/11101.0249ecst)

Brugnolotto, E., Scherrer, M., Schmid, H., Georgiev, V. and Sousa, M. (2023) Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template. Journal of Crystal Growth, 603, 127015. (doi: 10.1016/j.jcrysgro.2022.127015)

Dhar, R., Kumar, N. , Garcia, C. P. and Georgiev, V. (2023) Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application. Solid-State Electronics, 200, 108525. (doi: 10.1016/j.sse.2022.108525)

Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)

2022

Guan, Y., Georgiev, V. P. , Asenov, A. , Liang, F. and Chen, H. (2022) Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study. IEEE Transactions on Electron Devices, 69(11), pp. 6394-6399. (doi: 10.1109/TED.2022.3204596)

Lapham, P. and Georgiev, V. (2022) Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions. Solid-State Electronics, 197, 108442. (doi: 10.1016/j.sse.2022.108442)

Gauhar, G. A., Chenchety, A., Yenugula, H., Georgiev, V. , Asenov, A. and Badami, O. (2022) Study of gate current in advanced MOS architectures. Solid-State Electronics, 194, 108345. (doi: 10.1016/j.sse.2022.108345)

Rezaei, A. , Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

Shukla, R. P., Bomer, J. G., Wijnperle, D., Kumar, N. , Georgiev, V. P. , Singh, A. C., Krishnamoorthy, S., García, C. P., Pud, S. and Olthuis, W. (2022) Planar junctionless field-effect transistor for detecting biomolecular interactions. Sensors, 22(15), 5783. (doi: 10.3390/s22155783)

Tok, K. H., Mehedi, M., Zhang, J. F., Brown, J., Ye, Z., Ji, Z., Zhang, W., Marsland, J. S., Asenov, A. and Georgiev, V. (2022) An integral methodology for predicting long-term RTN. IEEE Transactions on Electron Devices, 69(7), pp. 3869-3875. (doi: 10.1109/TED.2022.3176585)

Kumar, N. , Dhar, R. P. S., García, C. P. and Georgiev, V. (2022) Discovery of Amino Acid fingerprints transducing their amphoteric signatures by field-effect transistors. ChemRxiv, (doi: 10.26434/chemrxiv-2022-bm062-v2)

Chen, R. et al. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part I: CNFET transistor optimization. IEEE Transactions on Very Large Scale Integration Systems, 30(4), pp. 432-439. (doi: 10.1109/TVLSI.2022.3146125)

Chen, R. et al. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part II: CNT interconnect optimization. IEEE Transactions on Very Large Scale Integration Systems, 30(4), pp. 440-448. (doi: 10.1109/TVLSI.2022.3146064)

Dutta, T. , Medina Bailon, C., Xeni, N., Georgiev, V. and Asenov, A. (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021, ISBN 9781665418928 (doi: 10.1109/NMDC50713.2021.9677480)

2021

Dhar, R. P. S., Kumar, N. , Medina-Bailon, C., Garcia, C. P. and Georgiev, V. P. (2021) TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application. In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021, ISBN 9781665437455 (doi: 10.1109/EuroSOI-ULIS53016.2021.9560701)

Vedel, C. D., Brugnolotto, E., Smidstrup, S. and Georgiev, V. P. (2021) Impact of Different Types of Planar Defects on Current Transport in Indium Phosphide (InP). In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021, ISBN 9781665437455 (doi: 10.1109/EuroSOI-ULIS53016.2021.9560698)

Dutta, T. , Georgiev, V. and Asenov, A. (2021) Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability. Solid-State Electronics, 184, 108100. (doi: 10.1016/j.sse.2021.108100)

Martinez-Oliver, C., Moselund, K. E. and Georgiev, V. P. (2021) Evaluation of Material Profiles for III-V Nanowire Photodetectors. In: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 13-17 Sep 2021, pp. 39-40. ISBN 9781665412766 (doi: 10.1109/NUSOD52207.2021.9541533)

Medina-Bailon, C., Kumar, N. , Dhar, R. P. S., Todorova, I., Lenoble, D., Georgiev, V. P. and Pascual García, C. (2021) Comprehensive analytical modelling of an absolute pH sensor. Sensors, 21(15), 5190. (doi: 10.3390/s21155190)

Medina-Bailon, C., Dutta, T. , Rezaei, A. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P. , Gamiz, F. and Asenov, A. (2021) Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator. Micromachines, 12(6), 601. (doi: 10.3390/mi12060601)

Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P. , Asenov, A. , Liang, F., Li, Z. and Chen, H. (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32(15), 150001. (doi: 10.1088/1361-6528/abd125) (PMID:33285530)

Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)

2020

Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A. , Nagy, D. , Georgiev, V. P. and Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Georgiev, V.P. , Sengupta, A. , Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F. and Asenov, A. (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 241-244. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241677)

Lapham, P., Badami, O., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. , Nagy, D. , Georgiev, V. and Asenov, A. (2020) A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 273-276. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241606)

McGhee, J. and Georgiev, V. P. (2020) First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 31-34. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241630)

Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS). In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 293-296. ISBN 9781728173542 (doi: 10.23919/SISPAD49475.2020.9241594)

McGhee, J. and Georgiev, V. P. (2020) Electronic and Optical Properties of Hydrogen-Terminated Diamond Doped by Molybdenum Oxide: A Density Functional Theory Study. In: 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Turin, Italy, 14-18 Sep 2020, ISBN 9781728160863 (doi: 10.1109/NUSOD49422.2020.9217662)

Xeni, N., Ghannam, R. , Georgiev, V. , Adamu-Lema, F., Badami, O. and Asenov, A. (2020) The Use of TCAD Simulations in Semiconductor Devices Teaching. Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020. ISBN 9781728188515 (doi: 10.1109/TREET50959.2020.9189752)

Dutta, T. , Georgiev, V. and Asenov, A. (2020) Vmin Prediction for Negative Capacitance MOSFET based SRAM. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 01-30 Sep 2020, ISBN 9781728187655 (doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)

Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D. , Georgiev, V. , Ding, J. and Asenov, A. (2020) A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory. IEEE Transactions on Nanotechnology, 19, pp. 704-710. (doi: 10.1109/TNANO.2020.3016182)

Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. and Asenov, A. (2020) RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study. In: Grasser, T. (ed.) Noise in Nanoscale Semiconductor Devices. Springer: Cham, pp. 441-466. ISBN 9783030374990 (doi: 10.1007/978-3-030-37500-3_13)

McGhee, J. and Georgiev, V. P. (2020) Simulation study of surface transfer doping of hydrogenated diamond by MoO₃ and V₂O₅ metal oxides. Micromachines, 11(4), 433. (doi: 10.3390/mi11040433)

Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)

2019

Xeni, N., Ghannam, R. , Udama, F., Georgiev, V. and Asenov, A. (2019) Semiconductor Device Visualization using TCAD Software: Case Study for Biomedical Applications. IEEE UKCAS 2019, London, UK, 06 Dec 2019. (Accepted for Publication)

Sadi, T., Badami, O., Georgiev, V. , Ding, J. and Asenov, A. (2019) Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870391)

Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)

Medina-Bailon, C., Dutta, T. , Klüpfel, S., Georgiev, V. and Asenov, A. (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870556)

Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nuñez, H., Lee, J., Badami, O., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, 40(10), pp. 1571-1574. (doi: 10.1109/LED.2019.2934349)

Guan, Y., Li, Z., Carrillo-Nunez, H., Zhang, Y., Georgiev, V. P. , Asenov, A. and Liang, F. (2019) An accurate analytical model for tunnel FET output characteristics. IEEE Electron Device Letters, 40(6), pp. 1001-1004. (doi: 10.1109/LED.2019.2914014)

Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V. and Asenov, A. (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9(9), 1895. (doi: 10.3390/app9091895)

Liang, J. et al. (2019) Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications. IEEE Transactions on Electron Devices, 66(5), pp. 2346-2352. (doi: 10.1109/TED.2019.2901658)

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi: 10.1109/TED.2019.2890985)

Sadi, T., Medina Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors. Materials, 12(1), 124. (doi: 10.3390/ma12010124)

Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)

Carrillo-Nunez, H., Wang, C., Asenov, A. , Young, R. and Georgiev, V. (2019) Simulation of Si Nanowire Quantum-Dot Devices for Authentication. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019, ISBN 9781728116587 (doi: 10.1109/EUROSOI-ULIS45800.2019.9041864)

Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi: 10.1109/NMDC47361.2019.9084010)

Lee, J., Lamarche, M. and Georgiev, V. P. (2019) The First-Priniple Simulation Study on the Specific Grain Boundary Resistivity in Copper Interconnects. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605907)

Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605884)

Mathew, P. T., Fang, F., Vila-Nadal, L. , Cronin, L. and Georgiev, V. (2019) First Principle Simulations of Current Flow in Inorganic Molecules: Polyoxometalates (POMs). In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019, ISBN 9781728116587 (doi: 10.1109/EUROSOI-ULIS45800.2019.9041869)

McGhee, J., Moran, D. A. and Georgiev, V. P. (2019) Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 Metal Oxide. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019, ISBN 9781728116587 (doi: 10.1109/EUROSOI-ULIS45800.2019.9041887)

Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, G., Kolkovska, N. and Georgiev, K. (eds.) Numerical Methods and Applications. Series: Lecture Notes in Computer Science, 11189 (11189). Springer, pp. 273-280. ISBN 9783030106911 (doi: 10.1007/978-3-030-10692-8_30)

Sadi, T., Badami, O., Georgiev, V. and Asenov, A. (2019) Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. In: 12th International Conference on Large-Scale Scientific Computing, LSSC 2019, Sozopol, Bulgaria, 10-14 June 2019, pp. 429-437. (doi: 10.1007/978-3-030-41032-2_49)

2018

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551638)

Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 262-265. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P. , Selberherr, S. and Asenov, A. (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 297-300. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551630)

Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2018) Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 301-304. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551707)

Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT. IEEE Transactions on Electron Devices, 65(11), pp. 4955-4962. (doi: 10.1109/TED.2018.2868421)

Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping. IEEE Transactions on Electron Devices, 65(11), pp. 4963-4970. (doi: 10.1109/TED.2018.2868424)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Pandey, R. R., Chen, R., Asenov, A. and Todri-Sanial, A. (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, 17(6), pp. 1084-1088. (doi: 10.1109/TNANO.2018.2802320)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)

Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

Georgiev, V. P. (2018) Development of Hierarchical Simulation Framework for Design and Optimization of Molecular Based Flash Cell. In: 2018 76th Device Research Conference (DRC), Santa Barbara, CA, USA, 24-27 Jun 2018, ISBN 9781538630280 (doi: 10.1109/DRC.2018.8442234)

Uhlig, B. et al. (2018) Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects. In: 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, USA, 4-7 Jun 2018, pp. 16-18. ISBN 9781538643372 (doi: 10.1109/IITC.2018.8430411)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354732)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354723)

Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350514)

Georgiev, V. P. , Vila-Nadal, L. , Cronin, L. and Asenov, A. (2018) Molecular Based Flash Cell for Low Power Flash Application: Optimization and Variability Evaluation. In: IEEE 12th Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 64-65. ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350505)

Uhlig, B. et al. (2018) Progress on Carbon Nanotube BEOL Interconnects. In: 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018, pp. 937-942. ISBN 9783981926309 (doi: 10.23919/DATE.2018.8342144)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A. , Azemard-Crestani, A. and Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 66-67. ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350506)

2017

Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, 111, pp. 649-655. (doi: 10.1016/j.spmi.2017.07.020)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi: 10.23919/SISPAD.2017.8085328)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi: 10.23919/SISPAD.2017.8085263)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi: 10.23919/SISPAD.2017.8085330)

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 157-160. (doi: 10.23919/SISPAD.2017.8085288)

Lee, J. et al. (2017) Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 153-156. (doi: 10.23919/SISPAD.2017.8085287)

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Pan Stanford: Singapore, pp. 215-252. ISBN 9789814774222

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017, pp. 144-147. ISBN 9781509053148 (doi: 10.1109/ULIS.2017.7962585)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi: 10.1016/j.sse.2016.12.015)

Lee, J., Sadi, T., Georgiev, V. P. , Todri-Sanial, A. and Asenov, A. (2017) A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017. (Unpublished)

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V. and Asenov, A. (2017) Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, pp. 281-284. ISBN 9784863486102 (doi: 10.23919/SISPAD.2017.8085319)

Todri-Sanial, A. et al. (2017) A survey of carbon nanotube interconnects for energy efficient integrated circuits. IEEE Circuits and Systems Magazine, 17(2), pp. 47-62. (doi: 10.1109/MCAS.2017.2689538)

2016

Al-Ameri, T. , Georgiev, V.P. , Lema, A., Sadi, T., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi: 10.1109/NMDC.2016.7777117)

Georgiev, V. P. , Mirza, M. M. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi: 10.1109/NMDC.2016.7777084)

Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V. , Brown, A., Millar, C. and Asenov, A. (2016) One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 23-26. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605139)

Al-Ameri, T. , Georgiev, V. P. , Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 213-216. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605185)

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi: 10.1109/ULIS.2016.7440096)

Asenov, A. , Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. and Georgiev, V.P. (2016) Nanowire Transistor Solutions for 5NM and Beyond. In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016, pp. 269-274. (doi: 10.1109/ISQED.2016.7479212)

2015

Georgiev, V.P. , Ali, T. , Wang, Y., Gerrer, L., Amoroso, S.M. and Asenov, A. (2015) Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors. In: 2015 International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sept 2015, (doi: 10.1109/IWCE.2015.7301960)

Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V. , Amoroso, S. M., Riddet, C. and Asenov, A. (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 353-356. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292332)

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292305)

Kivisaari, P., Sadi, T., Li, J., Georgiev, V. , Oksanen, J., Rinke, P. and Tulkki, J. (2015) Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 393-396. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292342)

Wang, Y. et al. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62(10), pp. 3229-3236. (doi: 10.1109/TED.2015.2470235)

Gerrer, L., Georgiev, V. , Amoroso, S.M., Towie, E. and Asenov, A. (2015) Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations. Microelectronics Reliability, 55(9-10), pp. 1307-1312. (doi: 10.1016/j.microrel.2015.06.094)

Georgiev, V. P. , Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi: 10.1109/TED.2014.2378378)

Al-Ameri, T. , Wang, Y., Georgiev, V.P. , Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi: 10.1109/NMDC.2015.7439240)

Georgiev, V. and Asenov, A. (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi: 10.1007/978-3-319-15585-2_22)

Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi: 10.1109/IWCE.2015.7301981)

2014

Amoroso, S. M., Georgiev, V. P. , Gerrer, L., Towie, E., Wang, X., Riddet, C., Brown, A. R. and Asenov, A. (2014) Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance. IEEE Transactions on Electron Devices, 61(12), pp. 4014-4018. (doi: 10.1109/TED.2014.2363212)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi: 10.1038/nature13951) (PMID:25409147)

Georgiev, V. , Amoroso, S. and Asenov, A. (2014) 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,

Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi: 10.1109/TED.2014.2315520)

Amoroso, S., Georgiev, V. , Towie, E., Riddet, C. and Asenov, A. (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi: 10.1109/IWCE.2014.6865854)

Georgiev, V. P. , Amoroso, S. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi: 10.1109/ESSDERC.2014.6948833)

2013

Vilà-Nadal, L. , Mitchell, S. G., Markov, S., Busche, C. , Georgiev, V. , Asenov, A. and Cronin, L. (2013) Towards polyoxometalate-cluster-based nano-electronics. Chemistry: A European Journal, 19(49), pp. 16502-16511. (doi: 10.1002/chem.201301631)

Georgiev, V.P. , Mohan, P.J., DeBrincat, D. and McGrady, J.E. (2013) Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport. Coordination Chemistry Reviews, 257(1), pp. 290-298. (doi: 10.1016/j.ccr.2012.05.025)

Georgiev, V. P. , Markov, S., Vilà-Nadal, L. , Asenov, A. and Cronin, L. (2013) Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit. In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013, ISBN 9783901578267

Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2013) Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 230-233. (doi: 10.1109/ESSDERC.2013.6818861)

Georgiev, V. P. , Towie, E. A. and Asenov, A. (2013) Interaction Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study. In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Glasgow, Scotland, 3-5 Sep 2013, pp. 416-419. ISBN 9781467357333 (doi: 10.1109/SISPAD.2013.6650663)

2012

Mohan, P.J., Georgiev, V.P. and McGrady, J.E. (2012) Periodic trends in electron transport through extended metal atom chains: comparison of Ru3(dpa)4(NCS)2 with its first-row analogues. Chemical Science, 3(4), pp. 1319-1329. (doi: 10.1039/C2SC01024K)

Georgiev, V.P. , Sameera, W.M.C. and McGrady, J.E. (2012) Attenuation of conductance in cobalt extended metal atom chains. Journal of Physical Chemistry C, 116(38), pp. 20163-20172. (doi: 10.1021/jp304807w)

Mistry, V.S., Georgiev, V.P. and McGrady, J.E. (2012) Electron transport through molecular wires based on a face-shared bioctahedral motif. Comptes Rendus Chimie, 15(2-3), pp. 176-183. (doi: 10.1016/j.crci.2011.11.001)

2011

Georgiev, V.P. and McGrady, J.E. (2011) The influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really broken? Journal of the American Chemical Society, 133(32), pp. 12590-12599. (doi: 10.1021/ja2028475)

2010

Georgiev, V. and McGrady, J.E. (2010) Efficient spin filtering through cobalt-based extended metal atom chains. Inorganic Chemistry, 49(12), (doi: 10.1021/ic100493t)

Velinova, M., Georgiev, V. , Todorova, T., Madjarova, G., Ivanova, A. and Tadjer, A. (2010) Boron–nitrogen- and boron-substituted anthracenes and -phenanthrenes as models for doped carbon-based materials. Journal of Molecular Structure: THEOCHEM, 955(1-3), pp. 97-108. (doi: 10.1016/j.theochem.2010.06.003)

2004

Dietz, F., Müllen, K., Baumgarten, M., Georgiev, V.P. and Tyutyulkov, N. (2004) Structure and properties of non-classical polymers. XIV. Heteronuclear 1-D polymers with 2-azaphenalenyl radicals. Chemical Physics Letters, 389(1-3), pp. 135-139. (doi: 10.1016/j.cplett.2004.03.058)

This list was generated on Wed Nov 20 13:33:03 2024 GMT.

Jump to: Articles | Book Sections | Conference or Workshop Item | Conference Proceedings

Number of items: 164.

Articles

Shukla, R. P. et al. (2024) Rational design of a planar junctionless field-effect transistor for sensing biomolecular interactions. Proceedings, 97(1), 121. (doi: 10.3390/proceedings2024097121)

McGhee, J. and Georgiev, V. P. (2020) Simulation study of surface transfer doping of hydrogenated diamond by MoO₃ and V₂O₅ metal oxides. Micromachines, 11(4), 433. (doi: 10.3390/mi11040433)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi: 10.1038/nature13951) (PMID:25409147)

Georgiev, V. and McGrady, J.E. (2010) Efficient spin filtering through cobalt-based extended metal atom chains. Inorganic Chemistry, 49(12), (doi: 10.1021/ic100493t)

Book Sections

Conference or Workshop Item

Conference Proceedings

This list was generated on Wed Nov 20 13:33:03 2024 GMT.

Grants

On going projects:

HORIZON 2020 EU platform

2020 - 2024 H2020 MSCA-ITN-2019: Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate Program (DESIGN-EID) - €878,988 (Principal Investigator & Project Coordinator)

2020 - 2024 H2020 FETOPEN-01-2020: Electrochemically-enabled high-throughput peptidomics for next-generation precision medicine (ElectroMed) - €2,999,167 (Principal Investigator)

EPSRC

2024 - 2029 AI Hub for Productive Research and Innovation in Electronics (APRIL) - £12,000,000 (Co-Investigator)
2023 - 2028 Chip-scale Atomic Systems for a Quantum Navigator - £8,883,909 (Co-Investigator)
2022 - 2023 Quantum Computing and Simulation Hub Partnership Resource Fund: Quantum mechanical simulation of aluminium oxide tunnel junctions as superconducting qubits -£167,984 (Principal Investigator)

2022 - 2026 Empowering Practical Interfacing of Quantum Computing (EPIQC) - £4,000,000 (Co-Investigator)

2021 - 2025 Enabling Cryogenic Chip Design and the Scaling of Quantum Computers (Innovate UK) - £3,500,00 (Co-Investigator)

2021 - 2025 Probing the States of Single Molecules for Sensing and Multi-value Memory Applications - £1,581,050 (Co-Investigator)

Past projects:

HORIZON 2020 EU platform

Carbon Nanotube Composite Interconnects (CONNECT)

Revolutionary Embedded Memory for the Internet of Things Devices and Energy Reduction (REMINDER)

Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm Node (SUPERAID7)

EPSRC

2020 - 2023 EPSRC UKRI ICT Prioritisation Grant: Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems - £446,241 (Co-Investigator)

2018 - 2021 EPSRC UKRI Innovation Fellowship: Qantum Simulator for Entangled Nano-Electronics (QSEE) - £600,000 (Principal Investigator)

2018 - 2021 EPSRC ICT Prioritisation Grant: Variability-aware RRAM PDL for design based research on FPGA/neuro computing - £400,000 (Co-Investigator)

2017 - 2018 EPSRC First Grant Scheme: Quantum Electronics Device Modelling (QUANTDEVMOD) - £125,000 (Principal Investigator)

OTHER

2024 - University of Glasgow: EPSRC Impact Acceleration Account project (PDK Development for Cryogenic Electronics) in collaboration with STMicroelectronics - £49,500

2024 - University of Glasgow:Horizon Europe Network Seed Funding Scheme - £1,500

2021 - University of Glasgow: EPSRC Impact Acceleration Account project (PDK Development for Cryogenic Electronics) in collaboration with SemiWise Ltd. - £40,000

2020 - University of Glasgow: EPSRC Impact Acceleration Account project (Semiconductor Device Variability Driven Encryption Technology for IoT applications) in collaboration with SemiWise Ltd. - £70,610

2019 - University of Glasgow: EPSRC Impact Acceleration Account (Nano-Electronic Simulation Software (NESS) - creating the first open source TCAD platform in the world) - £35, 719

2019 - University of Glasgow: EPSRC Impact Acceleration Account (attending industry event) - £2,500

2018 - University of Glasgow Rewards for Excellence - £10,000

2016 - Glasgow Research Partnership in Engineering (GRPE) - £2,800

2015 - Glasgow Research Partnership in Engineering (GRPE) - £3,000

2015 - Principal’s Early Career Mobility Fund - £2,000

Supervision

Current PhD students:

1st Supervisor:

Nicholas Smoliak: Machine Learning and numerical simulations of biosensors (Ph.D., 2024 -to date)
YingjiaGao: Development of novel numerical and machine learning methods for simulation of nanoelectronic device (Ph.D., 2023 -to date)
Patryk Maciazek: Modelling and Simulations of Avalanche Characteristics in SPAD Devices (Ph.D., 2023 -to date; Industrial funded PhD project by STMicroelectronics).
Pranav Acharya: Quantum mechanical simulation of superconducting qubits (Ph.D., 2021 -to date)
Varun Bheemireddy: Device Modeling of nanoscale neuromorphic circuits and systems(Ph.D., 2021 -to date)
Liansheng Liu: Modelling and Simulations of ultra-scaled nanowire transistors (Ph.D., 2019-to date)
Nikolas Xeni: Modelling and Simulations of Digital Fingerprints Based on Quantum Technology (Ph.D., 2019-to date)
Shashank Mishra: INnovative Network for Training in ToUch InteracTIVE Interfaces (Ph.D., 2020 -to date)

2nd Supervisor:

Weihao Li: 2D materials for energy applications (Ph.D., 2022-to date)
Isha Mani: Next generation diamond electronic devices (Ph.D., 2018-to date)
Angus Bruce: Germanium-Tin Single Photon Detectors for the Short Wave Infrared (Ph.D., 2020-to date)

Colletta, Giuseppe
SUPERCONDUCTING COHERENT STRUCTURES FOR NEXT-GENERATION QUANTUM TECHNOLOGY
Koursari, Eftychia
Bridge Scour: Monitoring, Prediction and Remediation
Maciazek, Patryk
A new simulation tool for SPAD including Monte Carlo and Spice

Past PhD students:

Christian Dam Vedel: Defects and their properties in InP and InGaAs: An ab initio study (Ph.D., 2020- 2024)
Enrico Brugnolotto: Heterointerface control in III-V nanowires monolithically integrated on silicon (Ph.D., 2020- 2024)
Paul Lapham: Simulation of current and future molecular electronic devices (Ph.D., 2019- 2023)
Rakshita Dhar: Modelling and Simulations of nano-biosensors (Ph.D., 2019-2023)
Talib Al-Ameri: Simulations of ultra-scaled Si nanowire transistors (Ph.D., 2014- 2018)
Joseph McGhee: Diamond electronic devices in space: a combined experimental and simulation study (Ph.D., 2016-2021)

Past Undergraduate and Master students:

Alhaitham Mohammed Masaaod Alkalbani (Master student - MSc. 2024)
Carlson Cheng (Master student - MSc. 2024)
Zimo Zhan (Master student - MSc. 2024)
Alzahraa Mohammad (Undergraduate student - BEng., 2024)
Haichen Ma (Undergraduate student - BEng., 2024)
Danila Tulyakov (Undergraduate student - BEng., 2024)
Mohammed AlKhalidi (Undergraduate student - BEng., 2023)
Tan Yixin (Master student - MSc. 2023)
Leipeng Bu (Master student - MSc. 2023)
Heichen Ma (Master student - MSc. 2023)
Reshmi Aravidan Nair (Master student - MSc. 2023)
Yuxin Wang (Master student - MSc. 2023)
Yuanxian Yang (Master student - MSc. 2023)
Mustafa Zariwala (Master student - MSc. 2023)
Feiyao Zhu (Master student - MSc. 2023)
Zijie Liu (Master student - MSc. 2022)
Dong Cheng (Master student - MSc. 2022)
Zijie Luie (Master student - MSc. 2022)
Yuxuan Xie (Master student - MSc. 2022)
Pengchang Zhang (Master student - MSc. 2022)
Zeyu Wang (Master student - MSc. 2022)
Junwen Yao (Master student - MSc. 2022)
Patryk Maciazek (Master student - MSc. 2021)
Sifan Zuo (Master student - MSc. 2021)
Mohid Handa (Master student - MSc. 2021)
Zhe Wen (Master student - MSc. 2021)
Guodong Wu (Master student - MSc. 2021)
Zijia Fang (Master student - MSc. 2021)
Daiwei Ruan (Master student - MSc. 2020)
Jingzhi Huang (Master student - MSc. 2020)
Yike Hu (Master student - MSc. 2020)
Tongzhou Liu (Master student - MSc. 2020)
Aidan Porteus (Master student - MSc. 2020)
Yujie Zhang (Master student - PDE MSc. 2020)
Serban-George Buliga (Undergraduate student - BEng., 2020)
Andrew Bryce (Master student - MSc. 2019)
Yuntao Fan (Master student - MSc. 2019)
Aleena Zubair (Master student - MSc. 2019)
Hongzheng Cai (Master student - MSc. 2019)
Jingzhi Huang (Master student - MSc. 2019)
Nadezda Dimitrova (Undergraduate student - BEng., 2018 - 2019)
Patryk Maciazek (Undergraduate student - BEng., 2018 - 2019)
Andrew Bryse (Master student - MSc. 2018)
Qinyi Zhao (Master student - MSc. 2018)
Cong Fu (Undergraduate student - BEng., 2017 - 2018)
Isha Mani (Undergraduate student - BEng., 2017 - 2018)
Qixian Zhao (Master student - MEng. 2017)
Serban-George Buliga (Undergraduate student - BEng., 2016 - 2017)
Michael Baxter (Undergraduate student - BEng., summer 2017 )
Jack Smith (PhD student summer 2017)
Alexandru-Iustin Dochioiu (Undergraduate student - BEng., 2015-2017)
Aleksandar Angelov (Undergraduate student) - Summer 2016

Teaching

Current courses

Analogue Electronics 2 (ENG2004)
Team Design Project 3 (ENG 3049)
Real Time Computer Systems 3 (ENG3043)

Past courses

Materials 1 (ENG 1033) - Course Convenor
Engineering Mathematics 1 (ENG 1063)

Research datasets

Jump to: 2017

Number of items: 1.

2017

Georgiev, V. , Mirza, M. M. A. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S., Towie, E., Riddet, C., MacLaren, D. , Asenov, A. and Paul, D. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. [Data Collection]

This list was generated on Wed Nov 20 07:57:04 2024 GMT.

Additional information

PhD Opportunities:

For prospective PhD students, the detailed application process is available at:

https://www.gla.ac.uk/schools/engineering/phdopportunities/

https://www.gla.ac.uk/postgraduate/research/electronicsnanoscale/#tab=apply

Fellowship Opportunities:

Information about the various fellowship, the application procedure and closing dates, can be found via the following links:

Marie Curie Fellowships
EPSRC Fellowships
Royal Academy of Engineering Fellowships
STFC Fellowships
Scottish Enterprise/Royal Society of Edinburgh (RSE) Enterprise Fellowships
Royal Society University Research Fellowships
Royal Society Dorothy Hodgkin Fellowships
Newton International Fellowships
Ernst Rutherford Fellowships
Fellowships supported by STFC
The Leverhume Trust Fellowships
University of Glasgow Fellowship Schemes

Please contact me if you are interested in applying for the Research Fellowships.

Online presentations:

Seminar given to the student in April 2021 showing some of the work and project in Device Modelling Group

Electrical and Optical Properties of Hydrogen-Terminated Diamond Doped byt Molybdennum Oxide

Vihar Georgiev

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Professor Vihar Georgiev

Biography

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2024

2023

2022

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2020

2019

2018

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2016

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2011

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Articles

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Conference or Workshop Item

Conference Proceedings

Grants

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Teaching

Current courses

Past courses

Research datasets

2017

Additional information

PhD Opportunities:

Online presentations: