Dr Tapas Dutta

  • Affiliate (School of Engineering)

Biography

Tapas Dutta received the Ph.D. degree in nanoelectronics and nanotechnology from the Grenoble INP, France. Afterwards, he joined IIT Kanpur, India as a postdoctoral researcher. Since September 2017, he has been with the Device Modeling Group at the University of Glasgow, where he has been a co-developer of NESS (Nano Electronic Simulation Software). He was also with Semiwise Ltd., Glasgow during 2017-2021 where he worked on the development and commercialization of several new technologies: a variability-resistant CMOS architecture, CMOS variability driven encryption technology, 1-transistor SRAM etc.

Research interests

  • Computational nanoelectronics

  • Compact modeling
  • Multiscale device simulations
  • Statistical variability
  • Steep slope devices
  • Device-circuit co-design
  • Cryogenic CMOS physics and modeling
  • TCAD for quantum computing applications

Publications

List by: Type | Date

Jump to: 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018
Number of items: 28.

2024

Acharya, P. , Rezaei, A. , Sengupta, A. , Dutta, T. , Kumar, N. , Maciazek, P., Asenov, A. and Georgiev, V. (2024) Analysis of random discrete dopants embedded nanowire resonant tunnelling diodes for generation of physically unclonable functions. IEEE Transactions on Nanotechnology, (doi: 10.1109/TNANO.2024.3504963) (Early Online Publication)

Dutta, T. , Adamu-Lema, F., Xeni, N., Rezaei, A. , Dixit, A. , Topaloglu, I. , Georgiev, V. and Asenov, A. (2024) Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024, (Accepted for Publication)

Dixit, A. , Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V. (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)

2023

Kumar, N. , Dixit, A. , Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Aleksandrov, P. , Rezaei, A. , Xeni, N., Dutta, T. , Asenov, A. and Georgiev, V. (2023) Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 169-172. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319587)

Aleksandrov, P. , Rezaei, A. , Dutta, T. , Xeni, N., Asenov, A. and Georgiev, V. (2023) Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor. IEEE Transactions on Electron Devices, 70(10), pp. 5448-5453. (doi: 10.1109/TED.2023.3306319)

Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)

2022

Rezaei, A. , Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

Dutta, T. , Medina Bailon, C., Xeni, N., Georgiev, V. and Asenov, A. (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021, ISBN 9781665418928 (doi: 10.1109/NMDC50713.2021.9677480)

2021

Dutta, T. , Georgiev, V. and Asenov, A. (2021) Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability. Solid-State Electronics, 184, 108100. (doi: 10.1016/j.sse.2021.108100)

Medina-Bailon, C., Dutta, T. , Rezaei, A. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Dutta, T. , Adamu-Lema, F., Nagy, D. , Asenov, A. , Nebesnyi, V., Han, J.-W. and Widjaja, Y. (2021) Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021, pp. 285-288. ISBN 9781665406857 (doi: 10.1109/SISPAD54002.2021.9592536)

Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)

2020

Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A. , Nagy, D. , Georgiev, V. P. and Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Dutta, T. , Adamu-Lema, F., Asenov, A. , Widjaja, Y. and Nebesnyi, V. (2020) Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sept.-6 Oct. 2020, pp. 237-240. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241653)

Georgiev, V.P. , Sengupta, A. , Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F. and Asenov, A. (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 241-244. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241677)

Lapham, P., Badami, O., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. , Nagy, D. , Georgiev, V. and Asenov, A. (2020) A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 273-276. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241606)

Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS). In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 293-296. ISBN 9781728173542 (doi: 10.23919/SISPAD49475.2020.9241594)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Dutta, T. , Georgiev, V. and Asenov, A. (2020) Vmin Prediction for Negative Capacitance MOSFET based SRAM. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 01-30 Sep 2020, ISBN 9781728187655 (doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)

2019

Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)

Medina-Bailon, C., Dutta, T. , Klüpfel, S., Georgiev, V. and Asenov, A. (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870556)

Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi: 10.1109/NMDC47361.2019.9084010)

2018

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)

Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 262-265. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354732)

This list was generated on Sat Dec 21 21:29:31 2024 GMT.
Jump to: Articles | Conference Proceedings
Number of items: 28.

Articles

Acharya, P. , Rezaei, A. , Sengupta, A. , Dutta, T. , Kumar, N. , Maciazek, P., Asenov, A. and Georgiev, V. (2024) Analysis of random discrete dopants embedded nanowire resonant tunnelling diodes for generation of physically unclonable functions. IEEE Transactions on Nanotechnology, (doi: 10.1109/TNANO.2024.3504963) (Early Online Publication)

Aleksandrov, P. , Rezaei, A. , Dutta, T. , Xeni, N., Asenov, A. and Georgiev, V. (2023) Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor. IEEE Transactions on Electron Devices, 70(10), pp. 5448-5453. (doi: 10.1109/TED.2023.3306319)

Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)

Rezaei, A. , Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

Dutta, T. , Georgiev, V. and Asenov, A. (2021) Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability. Solid-State Electronics, 184, 108100. (doi: 10.1016/j.sse.2021.108100)

Medina-Bailon, C., Dutta, T. , Rezaei, A. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A. , Nagy, D. , Georgiev, V. P. and Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Conference Proceedings

Dutta, T. , Adamu-Lema, F., Xeni, N., Rezaei, A. , Dixit, A. , Topaloglu, I. , Georgiev, V. and Asenov, A. (2024) Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024, (Accepted for Publication)

Dixit, A. , Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V. (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)

Kumar, N. , Dixit, A. , Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Aleksandrov, P. , Rezaei, A. , Xeni, N., Dutta, T. , Asenov, A. and Georgiev, V. (2023) Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 169-172. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319587)

Dutta, T. , Medina Bailon, C., Xeni, N., Georgiev, V. and Asenov, A. (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021, ISBN 9781665418928 (doi: 10.1109/NMDC50713.2021.9677480)

Dutta, T. , Adamu-Lema, F., Nagy, D. , Asenov, A. , Nebesnyi, V., Han, J.-W. and Widjaja, Y. (2021) Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021, pp. 285-288. ISBN 9781665406857 (doi: 10.1109/SISPAD54002.2021.9592536)

Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)

Dutta, T. , Adamu-Lema, F., Asenov, A. , Widjaja, Y. and Nebesnyi, V. (2020) Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sept.-6 Oct. 2020, pp. 237-240. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241653)

Georgiev, V.P. , Sengupta, A. , Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F. and Asenov, A. (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 241-244. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241677)

Lapham, P., Badami, O., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. , Nagy, D. , Georgiev, V. and Asenov, A. (2020) A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 273-276. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241606)

Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS). In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 293-296. ISBN 9781728173542 (doi: 10.23919/SISPAD49475.2020.9241594)

Dutta, T. , Georgiev, V. and Asenov, A. (2020) Vmin Prediction for Negative Capacitance MOSFET based SRAM. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 01-30 Sep 2020, ISBN 9781728187655 (doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)

Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)

Medina-Bailon, C., Dutta, T. , Klüpfel, S., Georgiev, V. and Asenov, A. (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870556)

Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi: 10.1109/NMDC47361.2019.9084010)

Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)

Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 262-265. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, T. , Georgiev, V. and Asenov, A. (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354732)

This list was generated on Sat Dec 21 21:29:31 2024 GMT.

Additional information

Full List of Publications & Citations: [Google Scholar]
PDF copies of papers are available on Research Gate: [ResearchGate]