Dr Richard Oxland

  • Honorary Research Associate (School of Engineering)

email: Richard.Oxland@glasgow.ac.uk

R204 Level 2, 70 Oakfield Avenue, Glasgow G12 8LP

Import to contacts

Publications

List by: Type | Date

Jump to: 2016 | 2015 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2005
Number of items: 18.

2016

Oxland, R. et al. (2016) InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process. IEEE Electron Device Letters, 37(3), pp. 261-264. (doi: 10.1109/LED.2016.2521001)

2015

Wang, S.-W. et al. (2015) Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack. IEEE Transactions on Electron Devices, 62(8), pp. 2429-2436. (doi: 10.1109/TED.2015.2445854)

2013

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi: 10.1109/IEDM.2013.6724639)

2012

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33(4), pp. 501-503. (doi: 10.1109/LED.2012.2185919)

2011

Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi: 10.1109/ted.2011.2111420)

2010

Oxland, R. K., Li, X. , Ferguson, S., Bentley, S. and Thayne, I. G. (2010) Copper-plated 50 nm T-gate fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6P7. (doi: 10.1116/1.3501346)

Oxland, R.K., Li, X. , Ferguson, S., Bentley, S. and Thayne, I. (2010) Copper–plated 50 nm T–gate fabrication. In: 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2010), Anchorage, AK, USA, 1-4 Jun 2010, pp. 15-24.

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi: 10.1016/j.sse.2009.11.008)

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi: 10.1049/el.2010.2781)

2009

Rahman, F., Oxland, R.K. and Khokhar, A.Z. (2009) Surface passivation of nitride- and phosphide-based compound semiconductors. Journal of Optoelectronics and Advanced Materials, 11(8), pp. 1117-1121.

Rahman, F., Xu, S., Watson, I.M., Mutha, D.K.B., Oxland, R.K., Johnson, N.P., Banerjee, A. and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94(3), pp. 633-639. (doi: 10.1007/s00339-008-4848-9)

Hwang, C.J., McGregor, I., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society: Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

McGregor, I., Lok, L.B., Hwang, C.J., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, Singapore, 7-10 December 2009, pp. 587-590.

Oxland, R.K., Long, A.R. and Rahman, F. (2009) Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi: 10.1016/j.mee.2009.05.007)

2008

Oxland, R.K. and Rahman, F. (2008) Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors. Semiconductor Science and Technology, 23(8), 085020. (doi: 10.1088/0268-1242/23/8/085020)

Oxland, R.K. and Rahman, F. (2008) Magnetic field sensors based on charge transport in indium phosphide heterojunction bipolar transistors. In: UK Semiconductor 08 Conference, Sheffield, UK, 2-3 July 2008,

2007

Oxland, R. and Rahman, F. (2007) Technology for an HBT magnetic sensor with integrated 3-D magnetic structures. In: UK Semiconductor 07 Conference, Sheffield, UK, July 2007,

2005

Craig, V., Burns, G., Oxland, R. and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

This list was generated on Sun Dec 22 06:16:11 2024 GMT.
Jump to: Articles | Book Sections | Conference Proceedings
Number of items: 18.

Articles

Oxland, R. et al. (2016) InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process. IEEE Electron Device Letters, 37(3), pp. 261-264. (doi: 10.1109/LED.2016.2521001)

Wang, S.-W. et al. (2015) Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack. IEEE Transactions on Electron Devices, 62(8), pp. 2429-2436. (doi: 10.1109/TED.2015.2445854)

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33(4), pp. 501-503. (doi: 10.1109/LED.2012.2185919)

Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi: 10.1109/ted.2011.2111420)

Oxland, R. K., Li, X. , Ferguson, S., Bentley, S. and Thayne, I. G. (2010) Copper-plated 50 nm T-gate fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6P7. (doi: 10.1116/1.3501346)

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi: 10.1016/j.sse.2009.11.008)

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi: 10.1049/el.2010.2781)

Rahman, F., Oxland, R.K. and Khokhar, A.Z. (2009) Surface passivation of nitride- and phosphide-based compound semiconductors. Journal of Optoelectronics and Advanced Materials, 11(8), pp. 1117-1121.

Rahman, F., Xu, S., Watson, I.M., Mutha, D.K.B., Oxland, R.K., Johnson, N.P., Banerjee, A. and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94(3), pp. 633-639. (doi: 10.1007/s00339-008-4848-9)

Oxland, R.K., Long, A.R. and Rahman, F. (2009) Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi: 10.1016/j.mee.2009.05.007)

Oxland, R.K. and Rahman, F. (2008) Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors. Semiconductor Science and Technology, 23(8), 085020. (doi: 10.1088/0268-1242/23/8/085020)

Book Sections

Hwang, C.J., McGregor, I., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society: Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

Conference Proceedings

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi: 10.1109/IEDM.2013.6724639)

Oxland, R.K., Li, X. , Ferguson, S., Bentley, S. and Thayne, I. (2010) Copper–plated 50 nm T–gate fabrication. In: 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2010), Anchorage, AK, USA, 1-4 Jun 2010, pp. 15-24.

McGregor, I., Lok, L.B., Hwang, C.J., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, Singapore, 7-10 December 2009, pp. 587-590.

Oxland, R.K. and Rahman, F. (2008) Magnetic field sensors based on charge transport in indium phosphide heterojunction bipolar transistors. In: UK Semiconductor 08 Conference, Sheffield, UK, 2-3 July 2008,

Oxland, R. and Rahman, F. (2007) Technology for an HBT magnetic sensor with integrated 3-D magnetic structures. In: UK Semiconductor 07 Conference, Sheffield, UK, July 2007,

Craig, V., Burns, G., Oxland, R. and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

This list was generated on Sun Dec 22 06:16:11 2024 GMT.