2023

Alomari, S., Al-Taai, Q. , Elksne, M. , Al-Khalidi, A. , Wasige, E. and Figueiredo, J. (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

2022

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

2021

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

2019

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

2018

Vasilevska, M. , Al-Khalidi, A. and Wasige, E. (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

Articles

Alomari, S., Al-Taai, Q. , Elksne, M. , Al-Khalidi, A. , Wasige, E. and Figueiredo, J. (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Conference or Workshop Item

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

Vasilevska, M. , Al-Khalidi, A. and Wasige, E. (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Conference Proceedings

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)