Eales, T.D., Marko, I.P. , Adams, A.R., Andrejew, A., Vizbaras, K. and Sweeney, S.J. (2021) Auger Recombination in Mid-Infrared Quantum Well Lasers. In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 21-25 June 2021, ISBN 9781665418768 (doi: 10.1109/CLEO/Europe-EQEC52157.2021.9542167)

2019

Eales, T. D. et al. (2019) Ge1-xSnx alloys: consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports, 9, 14077. (doi: 10.1038/s41598-019-50349-z) (PMID:31575881) (PMCID:PMC6773784)

Sharpe, M.K., Marko, I.P. , Duffy, D.A., England, J., Schneider, E., Kesaria, M., Federov, V., Clarke, E., Tan, C.H. and Sweeney, S.J. (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 12, 125706. (doi: 10.1063/1.5109653)

2018

Eales, T., Marko, I. , Ikyo, B.A., Adams, A.R., Andrejew, A., Vizbaras, K., Amann, M.-C., Shterengas, L. and Sweeney, S.J. (2018) The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Near- and Mid-Infrared. In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018, pp. 223-224. ISBN 9781538664865 (doi: 10.1109/ISLC.2018.8516247)

2017

Eales, T. D., Marko, I. P. , Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C. and Sweeney, S. J. (2017) Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb lasers. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1500909. (doi: 10.1109/JSTQE.2017.2687823)

Marko, I. P. and Sweeney, S. J. (2017) Progress toward III-V bismide alloys for near- and midinfrared laser diodes. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1501512. (doi: 10.1109/JSTQE.2017.2719403)

Eales, T., Marko, I.P. , Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J. (2017) Auger Recombination in Type I GaInAsSb/GaSb Lasers and Its Variation with Wavelength in the 2-3 μm Range. In: The European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25–29 Jun 2017, ISBN 9781509067367

Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)

2016

Eales, T., Marko, I. P. , Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C. and Sweeney, S. J. (2016) Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, I. P. , Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P. and Sweeney, S. J. (2016) Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, I. P. , Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P. and Sweeney, S. J. (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports, 6, 28863. (doi: 10.1038/srep28863) (PMID:27363930) (PMCID:PMC4929443)

Broderick, C. A., Rorison, J. M., Marko, I. P. , Sweeney, S. J. and O'Reilly, E. P. (2016) GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment. In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016, pp. 209-210. ISBN 9781467386036 (doi: 10.1109/NUSOD.2016.7546999)

Ikyo, A.B., Marko, I.P. , Hild, K. , Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J. (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs). Scientific Reports, 6, 19595. (doi: 10.1038/srep19595) (PMID:26781492) (PMCID:PMC4726019)

2015

Sweeney, S.J. , Marko, I.P. , Jin, S.R., Hild, K. and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

Read, G. W., Marko, I. P. , Hossain, N. and Sweeney, S. J. (2015) Physical properties and characteristics of III-V lasers on silicon. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1502208. (doi: 10.1109/JSTQE.2015.2424923)

Adams, A. R., Marko, I. P. , Mukherjee, J., Stolojan, V., Sweeney, S. J. , Gocalinska, A., Pelucchi, E., Thomas, K. and Corbett, B. (2015) Semiconductor quantum well lasers with a temperature-insensitive threshold current. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1500806. (doi: 10.1109/JSTQE.2015.2413403)

Marko, I. P. and Sweeney, S. J. (2015) Optical and electronic processes in semiconductor materials for device applications. In: Singh, J. and Williams, R.T. (eds.) Excitonic and Photonic Processes in Materials. Series: Springer series in materials science (203). Springer: Singapore, pp. 253-297. ISBN 9789812871312 (doi: 10.1007/978-981-287-131-2_9)

2014

Adams, A.R., Marko, I.P. , Mukherjee, J., Sweeney, S.J. , Gocalinska, A., Pelucchi, E. and Corbett, B. (2014) Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 7-10 Sep 2014, pp. 82-83. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.174)

Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)

Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)

Marko, I.P. , Adams, A.R., Massé, N.F. and Sweeney, S.J. (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers. IET Optoelectronics, 8(2), pp. 88-93. (doi: 10.1049/iet-opt.2013.0055)

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K. , Ikyo, A.B., Marko, I.P. , Sweeney, S.J. , Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

2013

Hild, K. , Batool, Z., Jin, S.R., Hossain, N., Marko, I.P. , Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

Crutchley, B. G., Marko, I. P. and Sweeney, S. J. (2013) The influence of temperature on the recombination processes in blue and green InGaN LEDs. Physica Status Solidi C, 10(11), pp. 1533-1536. (doi: 10.1002/pssc.201300360)

Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P. and Sweeney, S.J. (2013) Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management. Journal of Applied Physics, 114(7), 073104. (doi: 10.1063/1.4818794)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Crutchley, B. G., Marko, I. P. , Adams, A. R. and Sweeney, S. J. (2013) Investigating the Efficiency Limitations of GaN-based Emitters. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/CLEOE-IQEC.2013.6801007)

Ikyo, B. A., Marko, I. P. , Hild, K. , Adams, A. R., Arafin, S., Amann, M.-C. and Sweeney, S. J. (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

Aldukhayel, A., Jin, S.R., Marko, I.P. , Zhang, S.Y., Revin, D.G., Cockburn, J.W. and Sweeney, S.J. (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 693-697. (doi: 10.1002/pssb.201200848)

Crutchley, B.G., Marko, I.P. , Pal, J., Migliorato, M.A. and Sweeney, S.J. (2013) Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 698-702. (doi: 10.1002/pssb.201200514)

2012

Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)

Reed, G.T. et al. (2012) High performance silicon optical modulators. In: Photonics Asia 2012: Nanophotonics and Micro/Nano Optics, Beijing, China, 5-7 Nov 2012, ISBN 9780819493194 (doi: 10.1117/12.2001296)

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Tan, S.L. et al. (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors. Journal of Electronic Materials, 41(12), pp. 3393-3401. (doi: 10.1007/s11664-012-2245-9)

Blume, G., Hild, K. , Marko, I.P. , Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J. (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), 033108. (doi: 10.1063/1.4744985)

Hossain, N., Marko, I.P. , Jin, S.R., Hild, K. , Sweeney, S.J. , Lewis, R.B., Beaton, D.A. and Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes. Applied Physics Letters, 100(5), 051105. (doi: 10.1063/1.3681139)

2011

Lever, L. et al. (2011) Modulation of the absorption coefficient at 1:3μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, 36(21), pp. 4158-4160. (doi: 10.1364/OL.36.004158) (PMID:22048350)

Cheetham, K.J., Krier, A., Marko, I.P. , Aldukhayel, A. and Sweeney, S.J. (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters, 99(14), 141110. (doi: 10.1063/1.3646910)

Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)

Hild, K. , Marko, I.P. , Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

Ikyo, B.A., Marko, I.P. , Adams, A.R., Sweeney, S.J. , Canedy, C.L., Vurgaftman, I., Kim, C.S., Kim, M., Bewley, W.W. and Meyer, J.R. (2011) Temperature dependence of 4.1 μm mid-infrared type II "w" interband cascade lasers. Applied Physics Letters, 99(2), 021102. (doi: 10.1063/1.3606533)

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

2010

Sayid, S. A., Marko, I. P. , Sweeney, S. J. , Barrios, P. and Poole, P. J. (2010) Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers. Applied Physics Letters, 97(16), 161104. (doi: 10.1063/1.3504253)

Crutchley, B. G., Marko, I. P. , Adams, A. R. and Sweeney, S. J. (2010) Efficiency Limitations of Green InGaN LEDs and Laser Diodes. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 27-28. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642770)

Ikyo, B. A., Marko, I. P. , Adams, A. R., Sweeney, S. J. , Canedy, C. L., Vurgaftman, I., Kim, C. S., Kim, M., Bewley, W. W. and Meyer, J. R. (2010) Temperature Sensitivity of Mid-infrared Type II "W" Interband Cascade Lasers (ICL) Emitting at 4.1μm at Room Temperature. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 41-42. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642761)

Marko, I.P. , Aldukhayel, A.M., Adams, A.R., Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomić, S. (2010) Physical Properties of Short Wavelength 2.6μm InAs/AlSb-based Quantum Cascade Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 95-96. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642736)

Sayid, S. A., Marko, I. P. , Adams, A. R., Sweeney, S. J. , Barrios, P. and Poole, P. (2010) Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 75-76. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642746)

Tan, S.L., Tan, L.J.J., Goh, Y.L., Zhang, S., Ng, J.S., David, J.P.R., Marko, I.P. , Allam, J., Sweeney, S.J. and Adams, A.R. (2010) Reduction of Dark Current and Unintentional Background Doping in InGaAsN Photodetectors by Ex Situ Annealing. In: SPIE Optical Sensing and Detection 2010, Brussels, Belgium, 12-15 Apr 2010, ISBN 9780819481993 (doi: 10.1117/12.853912)

Sayid, S. A., Marko, I. P. , Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers. IEEE Journal of Quantum Electronics, 46(5), pp. 700-705. (doi: 10.1109/JQE.2009.2039117)

Sayid, S. A., Marko, I. P. , Sweeney, S. J. and Poole, P. (2010) Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 23-24. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516172)

Sayid, S. A., Marko, I. P. , Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 265-268. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516088)

2009

Ikyo, A.B., Marko, I.P. , Adams, A.R., Sweeney, S.J. , Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure. IET Optoelectronics, 3(6), pp. 305-309. (doi: 10.1049/iet-opt.2009.0045)

Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)

Marko, I.P. , Ikyo, A.B., Adams, A.R., Sweeney, S.J. , Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs. In: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 14-19 June 2009, ISBN 9781424440795 (doi: 10.1109/CLEOE-EQEC.2009.5193611)

Crowley, M. T., Marko, I. P. , Massé, N. F., Andreev, A. D., Tomic, S., Sweeney, S. J. , O'Reilly, E. P. and Adams, A. R. (2009) The importance of recombination via excited states in inAs/GaAs 1.3μm quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 15(3), pp. 799-807. (doi: 10.1109/JSTQE.2009.2015679)

Marko, I. P. , Adams, A. R., Sweeney, S. J. , Teissier, R., Baranov, A. N. and Tomić, S. (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 246(3), pp. 512-515. (doi: 10.1002/pssb.200880501)

Adams, A.R., Marko, I.P. , Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomić, S. (2009) The Effect of Hydrostatic Pressure on the Operation of Quantum Cascade Lasers. In: SPIE Quantum Cascade Lasers and Applications I, San Jose, USA, 25-28 Jan 2009, (doi: 10.1117/12.814322)

Massé, N.F., Marko, I.P. , Adams, A.R. and Sweeney, S.J. (2009) Temperature insensitive quantum dot lasers: Are we really there yet? Journal of Materials Science: Materials in Electronics, 20(SUPPL.), pp. 272-276. (doi: 10.1007/s10854-008-9574-8)

2008

Crowley, M.T., Marko, I.P. , Masse, N.F., Andreev, A.D., Sweeney, S.J. , O'Reilly, E.P. and Adams, A.R. (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 117-118. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636037)

Marko, I.P. , Adams, A.R., Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomic, S. (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 47-48. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636002)

Sweeney, S.J. , Hild, K. , Marko, I.P. , Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H. (2008) Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 83-84. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636020)

Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. , Marko, I.P. and Rushworth, S. (2008) Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702913)

2007

Marko, I.P. , Adams, A.R., Sweeney, S.J. , Whitbread, N.D., Ward, A.J., Asplin, B. and Robbins, D.J. (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature. In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Munich, Germany, 17-22 Jun 2007, ISBN 9781424409303 (doi: 10.1109/CLEOE-IQEC.2007.4385984)

Hild, K. , Sweeney, S.J. , Marko, I.P. , Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)

Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)

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Articles

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

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Aneirin, E., Duffy, D. , Marko, I., Acharya, S., Du, W., Yu, S.Q. and Sweeney, S. (2024) Challenges for room temperature operation of electrically pumped GeSn lasers. [Data Collection]

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