Professor Edward Wasige

Professor of High Frequency Electronics (Electronic & Nanoscale Engineering)

telephone: 01413308662
email: Edward.Wasige@glasgow.ac.uk

R109 Level 1, Eng -Micro & Nanotechnology, 74 Oakfield Avenue, Glasgow G12 8LP

Research interests

Edward Wasige leads the High Frequency Electronics (HFE) Group, Division of Electronics and Nanoscale Engineering, School of Engineering, University of Glasgow. He holds a First Class Honours BSc (Eng.) degree in Electrical Engineering from the University of Nairobi (1988, Kenya), an MSc in Microelectronics and Telecommunications from the University of Liverpool (1990, UK), and a PhD (with Distinction) in Electrical Engineering from Kassel University (1999, Germany) for developing a quasi-monolithic integration technology for microwave and millimetre-wave circuits. III-V active devices (GaAs FETs) were embedded in high resistivity Si substrates to realise low cost high performance circuits. Prior to joining the University of Glasgow in 2002, he held a UNESCO postdoctoral fellowship at The Technion (Israel) where he worked on resonant tunneling diode (RTD) oscillators, experimental modelling of heterojunction bipolar transistors (HBTs) and processing of gallium nitride (GaN) high electron mobility transistors (HEMTs). His current research covers compound semiconductor electronics, with focus on GaN device technologies for power electronics and for microwave electronics, and on indium phosphide (InP) based device and integrated circuit (IC) technologies for microwave, mm-wave and terahertz (THz) electronics.

Publications

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Number of items: 175.

2024

Zhang, W., Hejda, M., Al-Taai, Q. R. A. , Owen-Newns, D., Romeira, B., Figueiredo, J. M. L., Robertson, J., Wasige, E. and Hurtado, A. (2024) Photonic-electronic spiking neuron with multi-modal and multi-wavelength excitatory and inhibitory operation for high-speed neuromorphic sensing and computing. Neuromorphic Computing and Engineering, (doi: 10.1088/2634-4386/ad8df8) (Early Online Publication)

Hejda, M. et al. (2024) Programmable optical synaptic linking of neuromorphic photonic-electronic RTD spiking circuits. ACS Photonics, (doi: 10.1021/acsphotonics.4c01199) (Early Online Publication)

Robertson, J., Black, D., Al-Taai, Q. , Donati, G., Maylsheva, E., Romeira, B., Figueiredo, J., Dolores-Calzadilla, V., Wasige, E. and Hurtado, A. (2024) Ultrafast Temporal Integration and Pattern Recognition with Photonic-Electronic RTD Spiking Neurons. In: IEEE Photonics Conference (IPC), Rome, Italy, 10-14 Nov 2024, (Accepted for Publication)

Wang, J., Ofiare, A., Li, Q., Kelly, J. , Wasige, E. and Li, C. (2024) On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K. In: 103rd ARFTG Microwave Measurement Conference, Washington DC, USA, 21 June 2024, (Accepted for Publication)

2023

Wang, J., Ofiare, A., CHENG, H., Wasige, E. and Li, C. (2023) Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz -170 GHz. 102nd ARFTG Microwave Measurement Symposium, San Antonio, TX, USA, 21-24 Jan 2024. (Accepted for Publication)

Li, C. , Ofiare, A., Wang, J., Cheng, H., Al-Khalidi, A. and Wasige, E. (2023) Case Studies on Millimetre-wave and Terahertz On-chip Circuit Test Cluster for 6G Communications and Beyond programme at the University of Glasgow. Automated RF & Microwave Measurement Society (ARMMS) 2023 Autumn, Cambourne, UK, 06-07 Nov 2023.

Al-Taai, Q. R. , Hejda, M., Zhang, W., Romeira, B., Figueiredo, J. M.L., Wasige, E. and Hurtado, A. (2023) Optically-triggered deterministic spiking regimes in nanostructure resonant tunnelling diode-photodetectors. Neuromorphic Computing and Engineering, 3(3), 034012. (doi: 10.1088/2634-4386/acf609)

Romeira, B. et al. (2023) Brain-inspired nanophotonic spike computing: challenges and prospects. Neuromorphic Computing and Engineering, 3(3), 033001. (doi: 10.1088/2634-4386/acdf17)

Nowack, T. S. , Shah, Y. D. , Grant, J. P. , Escorcia Carranza, I. , Kenney, M. G. , Faccio, D. , Wasige, E. and Cumming, D. R.S. (2023) Metasurface optics with on-axis polarization control for terahertz sensing applications. IEEE Transactions on Terahertz Science and Technology, 13(4), pp. 373-380. (doi: 10.1109/TTHZ.2023.3263648)

Dhongde, A., Ofiare, A., Karami, K. and Wasige, E. (2023) Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks. UK Semiconductors 2023, Sheffield, UK, 12-13 July 2023. (Accepted for Publication)

Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Reddy, B. A., Ritter, D., Li, C. , Wasige, E. and Thoms, S. (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)

Alomari, S., Al-Taai, Q. , Elksne, M. , Al-Khalidi, A. , Wasige, E. and Figueiredo, J. (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

Hejda, M. et al. (2023) Artificial optoelectronic spiking neuron based on a resonant tunnelling diode coupled to a vertical cavity surface emitting laser. Nanophotonics, 12(5), pp. 857-867. (doi: 10.1515/nanoph-2022-0362)

Zhang, W., Hejda, M., Malysheva, E., Al-taai, Q. , Javaloyes, J., Wasige, E. , Figueiredo, J. M. L., Calzadilla, V., Romeira, B. and Hurtado, A. (2023) Tuneable presynaptic weighting in optoelectronic spiking neurons built with laser-coupled resonant tunneling diodes. Journal of Physics D: Applied Physics, 56, 084001. (doi: 10.1088/1361-6463/aca914)

Karami, K. , Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2023) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. International Journal of Electronics and Communication Engineering, 17(2), pp. 47-50.

2022

Lourenco, J., Al-Taai, Q. R. A. , Wasige, E. and Figueiredo, J. (2022) Resonant Tunnelling Diode – Photodetectors for Spiking Neural Networks. In: 5th International Conference on Application of Optics and Photonics (AOP2022), Guimarães, Portugal, 18-22 July 2022, (doi: 10.1088/1742-6596/2407/1/012047)

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Cimbri, D. , Morariu, R., Ofiare, A. and Wasige, E. (2022) A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources. In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC), Milan, Italy, 26-27 September 2022, pp. 204-207. ISBN 9782874870705 (doi: 10.23919/EuMIC54520.2022.9923482)

Nowack, T. S. , Shah, Y. D. , Escorcia, I. , Grant, J. P. , Kenney, M. , Pusino, V. , Faccio, D. , Wasige, E. and Cumming, D. R.S. (2022) Terahertz polarimetry with a monolithic metasurface. Optics Letters, 47(16), pp. 4199-4202. (doi: 10.1364/OL.463143)

Cimbri, D. , Yavas-Aydin, B., Hartmann, F., Jabeen, F., Worschech, L., Höfling, S. and Wasige, E. (2022) Accurate quantum transport modeling of high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes. IEEE Transactions on Electron Devices, 69(8), pp. 4638-4645. (doi: 10.1109/TED.2022.3178360)

Cheng, H., Dhongde, A., Karami, K. , Reynolds, P. , Thoms, S. , Wasige, E. and Li, C. (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dwidar, M., Wasige, E. and Al-Khalidi, A. (2022) Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs. UKNC 2022, 06 Jul 2022.

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Cimbri, D. , Morariu, R., Ofiare, A. and Wasige, E. (2022) In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes with High-Power Performance in the Low-Terahertz Band. In: 2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS), Duisburg, Germany, 04-06 Jul 2022, ISBN 9781665482752 (doi: 10.1109/IWMTS54901.2022.9832442)

Cimbri, D. , Wang, J. and Wasige, E. (2022) Epitaxial Structure Simulation Study of In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes. In: 2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS), Duisburg, Germany, 04-06 Jul 2022, ISBN 9781665482752 (doi: 10.1109/IWMTS54901.2022.9832441)

Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Thoms, S. , Reddy, B. A., Ritter, D., Li, C. and Wasige, E. (2022) Robust sub-100 nm T-gate fabrication process using multi-step development. MNE EUROSENSORS 2022, Leuven, Belgium, 19-23 September 2022.

Al-Taai, Q. R. A. , Morariu, R. , Wang, J., Al-Khalidi, A. , Al-Moathin, A., Romeira, B., Figueiredo, J. and Wasige, E. (2022) Towards an Excitable Microwave Spike Generator for Future Neuromorphic Computing. In: European Microwave Week 2021, London, UK, 02-07 Apr 2022, pp. 386-389. ISBN 9781665447225 (doi: 10.23919/EuMIC50153.2022.9783686)

Cimbri, D. and Wasige, E. (2022) An Advanced TCAD Quantum Transport-based Simulation Approach for InP RTD Devices Simulation. International School on Terahertz Photonics and Electronics, Pisa, Italy, 09-14 May 2022.

Cimbri, D. , Wang, J., Al-Khalidi, A. and Wasige, E. (2022) Resonant tunnelling diodes high-speed terahertz wireless communications - a review. IEEE Transactions on Terahertz Science and Technology, 12(3), pp. 226-244. (doi: 10.1109/TTHZ.2022.3142965)

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Cimbri, D. and Wasige, E. (2022) Modelling, Design, Fabrication, and Characterisation of In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes for Low-Terahertz Sources. European Microwave Week 2021, London, UK, 02-07 Apr 2022.

Wang, J., Al-Khalidi, A. , Ahearne, S. and Wasige, E. (2022) 22Gbps/80cm Low-Cost THz Wireless System. In: European Microwave Week 2021, London, UK, 02-07 Apr 2022, ISBN 9782874870637 (doi: 10.23919/EuMC50147.2022.9784247)

Wang, J., Naftaly, M. and Wasige, E. (2022) An overview of terahertz imaging with resonant tunneling diodes. Applied Sciences, 12(8), 3822. (doi: 10.3390/app12083822)

2021

Al-Taai, Q. R. A. , Wang, J., Morariu, R. , Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Analysis of stability of nano- vs micro-sized resonant tunnelling diode (RTD) devices for future neuromorphic computing applications. International Journal of Nanoelectronics and Materials, 14, pp. 149-155.

Cimbri, D. , Weimann, N., Al-Taai, Q. R. A. , Ofiare, A. and Wasige, E. (2021) Ohmic contacts optimisation for high-power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure E-beam lithography approach. International Journal of Nanoelectronics and Materials, 14, pp. 11-19.

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Wang, J., Al-Khalidi, A. , Ahearne, S. and Wasige, E. (2021) 1080P HD Video Transmission using RTD Transmitter. In: 14th UK-Europe-China Workshop on Millimetre Waves and THz Technologies (UCMMT2021), Lancaster, UK, 13-15 Sept 2021, ISBN 9781665438537 (doi: 10.1109/UCMMT53364.2021.9569915)

Cimbri, D. and Wasige, E. (2021) Terahertz communications with Resonant Tunnelling Diodes: status and perspectives. In: Ghafoor, S., Rehmani, M. H. and Davy, A. (eds.) Next Generation Wireless Terahertz Communication Networks. CRC Press: Boca Raton, pp. 25-87. ISBN 9780367430726 (doi: 10.1201/9781003001140-3)

Samanta, S. , Wang, J. and Wasige, E. (2021) Two-Step Lithography RTD Fabrication Process Using Air-Bridge Technology. Compound Semiconductor Week 2021 (CSW-2021), 09-13 May 2021.

Cimbri, D. , Yavas-Aydin, B., Jabeen, F., Höfling, S. and Wasige, E. (2021) Modeling of High-Power Resonant Tunneling Diodes through the Non-Equilibrium Green’s Function Method. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Basu, R., Rao, J. N., Letizia, R., Ni, Q., Wasige, E. and Al-Khalidi, A. (2021) Front End for D-band High Data Rate Point to Point Links. 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020), Buffalo, NY, USA, 8-13 Nov 2020.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

Al-Taai, Q. R. A. , Al-Khalidi, A. , Wang, J., Romeira, B., Figueiredo, J. and Wasige, E. (2021) Extremely low-power consumption nano-RTD photodetectors for future neuromorphic computing. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 Jun 2021.

Cito, M., Cimbri, D. , Childs, D. , Baba, R., Harrison, B.A., Watt, A., Mukai, T., Wasige, E. and Hogg, R. A. (2021) Micro-PL analysis of high current density resonant tunneling diodes for THz applications. Applied Physics Letters, 119(7), 072102. (doi: 10.1063/5.0059339)

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Zhang, W., Al-Khalidi, A. , Figueiredo, J., Al-Taai, Q. R. A. , Wasige, E. and Hadfield, R. H. (2021) Analysis of excitability in resonant tunneling diode-photodetectors. Nanomaterials, 11(6), 1590. (doi: 10.3390/nano11061590)

2020

Paoloni, C., Basu, R., Billa, L. R., Rao, J. M., Letizia, R., Ni, Q., Wasige, E. , Al-Khalidi, A. , Wang, J. and Morariu, R. (2020) Long‐range millimetre wave wireless links enabled by travelling wave tubes and resonant tunnelling diodes. IET Microwaves, Antennas and Propagation, 14(15), pp. 2110-2114. (doi: 10.1049/iet-map.2020.0084)

Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, A. , Wasige, E. and Kalna, K. (2020) The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability, 115, 113965. (doi: 10.1016/j.microrel.2020.113965)

Al-Khalidi, A. , Alharbi, K. H., Wang, J., Morariu, R. , Wang, L., Khalid, A., Figueiredo, J. and Wasige, E. (2020) Resonant tunnelling diode terahertz sources with up to 1 mW output power in the J-band. IEEE Transactions on Terahertz Science and Technology, 10(2), pp. 150-157. (doi: 10.1109/TTHZ.2019.2959210)

2019

Morariu, R. , Wang, J., Cornescu, A. C., Al-Khalidi, A. , Ofiare, A., Figueiredo, J. M.L. and Wasige, E. (2019) Accurate small-signal equivalent circuit modelling of resonant tunneling diodes to 110 GHz. IEEE Transactions on Microwave Theory and Techniques, 67(11), pp. 4332-4340. (doi: 10.1109/TMTT.2019.2939321)

Cornescu, A. C., Morariu, R. , Ofiare, A., Al-Khalidi, A. , Wang, J., Figueiredo, J. M.L. and Wasige, E. (2019) High efficiency bias stabilisation for resonant tunneling diode oscillators. IEEE Transactions on Microwave Theory and Techniques, 67(8), pp. 3449-3454. (doi: 10.1109/TMTT.2019.2916602)

Zhang, W. et al. (2019) Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator. Optics Express, 27(12), pp. 16791-16797. (doi: 10.1364/OE.27.016791) (PMID:31252899)

Al-Khalidi, A. , Wang, J. and Wasige, E. (2019) Mm-wave/THz Multi-Gigabit Wireless Links Using Resonant Tunnelling Diodes. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2019), Cabourg, France, 17-19 June 2019.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Wasige, E. , Wang, J. and Al-Khalidi, A. (2019) Mm-wave/THz Multi-Gigabit Wireless Links. ARMMS Conference, Thame, UK, 01-02 Apr 2019.

Watson, S. , Zhang, W., Tavares, J., Figueiredo, J., Cantu, H., Wang, J., Wasige, E. , Salgado, H., Pessoa, L. and Kelly, A. (2019) Resonant tunneling diode photodetectors for optical communications. Microwave and Optical Technology Letters, 61(4), pp. 1121-1125. (doi: 10.1002/mop.31689)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

2018

Wang, J., Al-Khalidi, A. , Wang, L., Morariu, R. , Ofiare, A. and Wasige, E. (2018) 15 Gb/s 50-cm wireless link using a high power compact III-V 84 GHz transmitter. IEEE Transactions on Microwave Theory and Techniques, 66(11), pp. 4698-4705. (doi: 10.1109/TMTT.2018.2859983)

Vasilevska, M. , Al-Khalidi, A. and Wasige, E. (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) A Compact Terahertz Source Technology for Automotive Radar and Other Applications. In: 19th International Radar Symposium (IRS2018), Bonn, Germany, 19-22 Jun 2018, ISBN 9783736995451

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) THz Electronics for Data Centre Wireless Links - the TERAPOD Project. In: 9th International Congress on Ultra Modern Telecommunications and Control Systems, Munich, Germany, 6-8 Nov 2017, pp. 445-448. ISBN 9781538634356 (doi: 10.1109/ICUMT.2017.8255202)

Al-Khalidi, A. , Wang, J. and Wasige, E. (2018) Compact J-band Oscillators with 1 mW RF Output Power and over 110 GHz Modulation Bandwidth. In: 43rd International Conference on Infrared, Milimeter and Terahertz Waves (IRMWW-THz 2018), Nagoya, Japan, 9-14 Sep 2018, ISBN 9781538638095 (doi: 10.1109/IRMMW-THz.2018.8510099)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

Wang, J., Al-Khalidi, A. , Morariu, R. , Ofiare, A., Wang, L. and Wasige, E. (2018) 15 Gbps Wireless Link Using W-band Resonant Tunnelling Diode Transmitter. In: 2018 15th European Radar Conference (EuRAD), Madrid, Spain, 26-28 Sep 2018, pp. 385-388. ISBN 9782874870538 (doi: 10.23919/EuRAD.2018.8546598)

Zhang, W., Watson, S. , Wang, J., Figueiredo, J., Wasige, E. and Kelly, A. E. (2018) Optical Characteristics Analysis of Resonant Tunneling Diode Photodiode Based Oscillators. In: 2018 IEEE 87th Vehicular Technology Conference (VTC Spring), Porto, Portugal, 3-6 June 2018, ISBN 9781538663554 (doi: 10.1109/VTCSpring.2018.8417889)

2017

Wang, J., Al-Khalidi, A. , Zhang, C., Ofiare, A., Wang, L., Wasige, E. and Figueiredo, J. M. L. (2017) Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter. In: 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Liverpool, UK, 11-13 Sept 2017, pp. 1-4. ISBN 9781538627204 (doi: 10.1109/UCMMT.2017.8068497)

Wang, J., Al-Khalidi, A. , Zhang, C., Cornescu, A., Morariu, R. and Wasige, E. (2017) Resonant Tunneling Diode Oscillator Source for Terahertz Applications. Oxford Circuits and Systems Conference (OXCAS 2017), Oxford, UK, 19 Sep 2017.

Bissell, V., Rodrigues, G. C., Wang, J., Al-Khalidi, A. , Alharbi, K. H. and Wasige, E. (2017) Resonant Tunneling Diode Photodetectors for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, p. 1045307. ISBN 9781510613836 (doi: 10.1117/12.2271317)

Watson, S. , Zhang, W., Wang, J., Al-Khalidi, A. , Cantu, H., Figueiredo, J., Wasige, E. and Kelly, A. E. (2017) Resonant Tunneling Diode Oscillators for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Q. ISBN 9781510613836 (doi: 10.1117/12.2276319)

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J. , Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi: 10.1002/pssa.201600835)

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wang, J., Al-Khalidi, A. , Cornescu, A., Morariu, R. , Khalid, A.-u.-H. , Cumming, D. and Wasige, E. (2017) Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wasige, E. , Al-Khalidi, A. , Alharbi, K. and Wang, J. (2017) High performance microstrip resonant tunneling diode oscillators as terahertz sources. In: UK-Europe-China Workshop on mm-waves and THz Technologies committee (UCMMT2016), Qingdao, China, 5-7 Sep 2016, pp. 25-28. ISBN 9781509022762 (doi: 10.1109/UCMMT.2016.7873950)

Wasige, E. , Alharbi, K. H., Al-Khalidi, A. , Wang, J. and Khalid, A. (2017) Resonant Tunnelling Diode Terahertz Sources for Broadband Wireless Communications. In: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, San Francisco, CA, USA, 28 Jan - 2 Feb 2017, (doi: 10.1117/12.2256357)

Alharbi, K. H., Khalid, A. , Ofiare, A., Wang, J. and Wasige, E. (2017) Diced and grounded broadband bow-tie antenna with tuning stub for resonant tunnelling diode terahertz oscillators. IET Microwaves, Antennas and Propagation, 11(3), pp. 310-316. (doi: 10.1049/iet-map.2016.0395)

Alharbi, K. H., Khalid, A. , Ofiare, A., Wang, J. and Wasige, E. (2017) Broadband Bow-Tie Slot Antenna with Tuning Stub for Resonant Tunnelling Diode Oscillators with Novel Configuration for Substrate Effects Suppression. In: European Microwave Conference, London, 3-7 Oct 2016, pp. 421-424. ISBN 9782874870439 (doi: 10.1109/EuMC.2016.7824369)

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H., Wasige, E. and Figueiredo, J. (2017) High Performance Resonant Tunneling Diode Oscillators as Terahertz Sources. In: European Microwave Conference, London, 3-7 Oct 2016, pp. 341-344. ISBN 9782874870439 (doi: 10.1109/EuMC.2016.7824348)

Davy, A., Pessoa, L., Renaud, C., Wasige, E. , Naftaly, M., Kurner, T., George, G., Cojocari, O., O'Mahony, N. and Porcel, M. A. G. (2017) Building an end user focused THz based ultra high bandwidth wireless access network: The TERAPOD approach. In: 2017 9th International Congress on Ultra Modern Telecommunications and Control Systems and Workshops (ICUMT), Munich, Germany, 6-8 Nov 2017, pp. 454-459. ISBN 9781538634356 (doi: 10.1109/ICUMT.2017.8255205)

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi: 10.1117/12.2276350)

2016

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H. and Wasige, E. (2016) G-Band MMIC Resonant Tunneling Diode Oscillators. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi: 10.1109/ICIPRM.2016.7528736)

Kgwadi, M., Alharbi, K., Wang, J. and Wasige, E. (2016) Slot-Ring Multiport Driven Antenna with Improved Airside Radiation for Terahertz Communications. European Microwave Conference, London, UK, 03-07 Oct 2016. ISBN 9782874870439 (doi: 10.1109/EuMC.2016.7824576)

Ofiare, A., Wang, J., Alharbi, K., Khalid, A. , Wasige, E. and Wang, L. (2016) Novel Tunnel Diode Oscillator Power Combining Circuit Topology Based on Synchronisation. In: 2015 Asia-Pacific Microwave Conference (APMC), Nanjing, China, 06-09 Dec 2015, ISBN 9781479987658 (doi: 10.1109/APMC.2015.7413551)

Pessoa, L. et al. (2016) iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers. IEEE COMSOC MMTC Communications - Frontiers, 11(1), pp. 12-17.

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J. , Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

2015

Al-Khalidi, A. and Wasige, E. (2015) Advanced Gallium Nitride Technology for Microwave Power Amplifiers. Defence and Security Doctoral Symposium, Swindon, UK, 25-26 Nov 2015.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2015) AlN/GaN HEMT Technology with In-situ SiNx Passivation. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 251-253. ISBN 9781479982295 (doi: 10.1109/PRIME.2015.7251382)

Alharbi, K. H., Ofiare, A., Kgwadi, M., Khalid, A.-u.-H. and Wasige, E. (2015) Bow-tie Antenna for Terahertz Resonant Tunnelling Diode Based Oscillators on High Dielectric Constant Substrate. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 168-171. ISBN 9781479982295 (doi: 10.1109/PRIME.2015.7251361)

Alharbi, K. H., Ofiare, A., Wang, J., Kgwadi, M., Khalid, A. and Wasige, E. (2015) Broadband Slotted Bow-tie Antennas for Terahertz Resonant Tunnelling Diode Based Oscillators. In: Progress In Electromagnetics Research Symposium, Prague, Czech Republic, 6-9 July 2015, p. 1527.

Alharbi, K. H., Ofiare, A., Wang, J., Khalid, A. , Cumming, D. and Wasige, E. (2015) On-wafer 2D Characterization Technique for Quasi-Yagi Antenna for G-band Applications. In: Progress In Electromagnetics Research Symposium, Prague, Czech Republic, 6-9 July 2015, p. 1527.

Li, X. , Floros, K., Ternent, G., Al-Khalidi, A. , Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

Ofiare, A., Brown, R., Alharbi, K., Wang, J., Khalid, A. , Cumming, D. and Wasige, E. (2015) Accurate Pulsed I-V Measurement of the NDR Region of Tunnel Diodes and Resonant Tunneling Diodes. In: UK Semiconductors 2015, Sheffield, UK, 1-2 July 2015,

Wang, J., Alharbi, K., Khalid, A. and Wasige, E. (2015) Planar Fabrication Process Development for Mm-Wave Resonant Tunneling Diode (RTD) Using BCB Etch-Back. In: 27th International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, USA, 28 June - 2 July 2015,

Wang, J., Alharbi, K., Ofiare, A., Brown, R., Khalid, A. , Cumming, D. and Wasige, E. (2015) D-band Resonant Tunnelling Diode Oscillator with High Output Power. In: UK Semiconductors 2015, Sheffield, UK, 1-2 July 2015,

Wang, J., Alharbi, K., Ofiare, A., Zhou, H., Khalid, A. , Cumming, D. and Wasige, E. (2015) High Performance Resonant Tunneling Diode Oscillators for THz Applications. In: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), New Orleans, LA, USA, 11-14 Oct 2015, pp. 1-4. ISBN 9781479984947 (doi: 10.1109/CSICS.2015.7314509)

Wang, J., Ofiare, A., Alharbi, K., Brown, R., Khalid, A. , Cumming, D. and Wasige, E. (2015) MMIC Resonant Tunneling Diode Oscillators for Thz Applications. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 262-265. (doi: 10.1109/PRIME.2015.7251385)

2014

Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X. , Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi: 10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi: 10.1002/pssc.201300179)

Al-Khalidi, A. , Gallacher, K. , Khalid, A. , Paul, D. and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A. , Gallacher, K. and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Alharbi, K.H., Ofiare, A., Wang, J., Khalid, A. , Cumming, D. and Wasige, E. (2014) Radiation pattern characterisation setup for G-band planar yagi antennas. In: 2nd Annual Active and Passive RF Devices Seminar, Birmingham, UK, 29 Oct 2014,

Cho, S.-J., Roberts, J.W., Li, X. , Ternent, G., Floros, K., Thayne, I. , Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

Faramehr, S., Al-Khalidi, A. , Khalid, A. , Wasige, E. , Igić, P. and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Khalid, A. , Wang, J., Ofiare, A., Alharbi, K., Cumming, D. and Wasige, E. (2014) Resonant tunneling and planar Gunn diodes: a comparison of two solid state sources for terahertz technology. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Li, X. , Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X. , Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl₄based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi: 10.1063/1.4887139)

Ofiare, A., Alharbi, K., Khalid, A. , Wang, J., Cumming, D. and Wasige, E. (2014) Wideband planar Yagi antennas for millimetre wave frequency applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Sinclair, J., Brown, R., Al-Khalidi, A. and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

Wang, J., Alharbi, K., Ofiare, A., Khalid, A. , Wang, L., Cumming, D. and Wasige, E. (2014) Series coupled resonant tunneling diode oscillators for terahertz applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Wang, J., Wang, L., Li, C. , Alharbi, K., Khalid, A. and Wasige, E. (2014) W-band InP-based resonant tunnelling diode oscillator with milliwatt output power. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, pp. 1-2. (doi: 10.1109/ICIPRM.2014.6880531)

2013

Wang, J., Wang, L., Li, C. and Wasige, E. (2013) 28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power. Electronics Letters, 49(13), pp. 816-818. (doi: 10.1049/el.2013.1583)

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S. and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A. , Ternent, G., Thayne, I. and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

Wang, J., Wang, L., Li, C. , Cumming, D. and Wasige, E. (2013) Novel resonant tunnelling diode oscillator with high output power. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Wang, J. and Wasige, E. (2013) IV characteristics of resonant tunnelling diodes investigated by a numerical model based on semiconductor physics. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

2012

Wang, J. and Wasige, E. (2012) Self-consistent analysis of the IV characteristics of resonant tunnelling diodes. International Journal of Terahertz Science and Technology, 5(4), pp. 153-162. (doi: 10.11906/TST.153-162.2012.12.14)

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

Al-Khalidi, A. , Macfarlane, D. and Wasige, E. (2012) Self-aligned Recessed Ohmic Contacts for GaN-based High Electron Mobility Transistors. UK Nitride Consortium 2012, Sheffield, UK, 4-5 Jul 2012.

2011

Taking, S., Macfarlane, D., Khokhar, A. Z., Dabiran, A. M. and Wasige, E. (2011) DC and RF performance of AlN/GaN MOS-HEMTs. IEICE Transactions on Electronics, E94-C(5), pp. 835-841.

Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN MOS-HEMTs with thermally grown Al₂O₃ passivation. IEEE Transactions on Electron Devices, 58(5), pp. 1418-1424. (doi: 10.1109/TED.2011.2114665)

Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi: 10.1155/2011/821305)

Wang, L., Figueiredo, J.M.L., Ironside, C.N. and Wasige, E. (2011) DC characterisation of tunnel diodes under stable non-oscillatory circuit conditions. IEEE Transactions on Electron Devices, 58(2), pp. 343-347. (doi: 10.1109/TED.2010.2091507)

2010

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi: 10.1049/el.2010.2781)

Banerjee, A., Taking, S., MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Development of Enhancement Mode AlGaN/GaN MOS-HEMTs using Localized Gate-Foot Oxidation. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Banerjee, A., Taking, S., MacFarlane, D. and Wasige, E. (2010) Enhancement Mode GaN-based MOSHEMTs. In: ARMMS: RF and Microwave Society Conference, Steventon, Oxfordshire, 19th and 20th April,

Ironside, C.N., Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L. and Wasige, E. (2010) Resonant Tunneling Diode Optoelectronic Integrated Circuits [paper 7608-17]. In: SPIE Photonics West in Quantum Sensing and Nanophotonics Devices VII, San Francisco, California, 24 - 28 January 2010,

Taking, S., Banerjee, A., Zhou, H., Li, X. , MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

Taking, S., Khokhar, A., MacFarlane, D., Sharabi, S., Dabiran, A.M. and Wasige, E. (2010) New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Wang, L. and Wasige, E. (2010) Tunnel Diode Microwave Oscillators Employing a Novel Power Combining Circuit Topology. In: European Microwave Conference, September, 2010,

2009

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L.Q., Wasige, E. , Ironside, C.N., Kelly, A.E. and Green, R. (2009) Nonlinear dynamics of resonant tunneling optoelectronic circuits for wireless/optical interfaces. IEEE Journal of Quantum Electronics, 45(11), pp. 1436-1445. (doi: 10.1109/JQE.2009.2028084)

Rahman, F., Xu, S., Watson, I.M., Mutha, D.K.B., Oxland, R.K., Johnson, N.P., Banerjee, A. and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94(3), pp. 633-639. (doi: 10.1007/s00339-008-4848-9)

Ironside, C., Romeira, B., Figueiredo, J.M.L., Slight, T., Wasige, E. and Wang, L. (2009) The resonant tunneling diode-laser optoelectronic integrated circuit operating as a voltage controlled oscillator. In: SPIE Microtechnologies for the new millennium, photonic materials devices and applications, Dresden, 4-6 May 2009, (doi: 10.1117/12.822570)

Romeira, B., Figueiredo, J.M.L., Slight, T., Wang, L., Wasige, E. and Ironside, C. (2009) Wireless to optical frequency locking and chaos using a resonant tunnelling - laser diode circuit. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 Jan 2009, pp. 128-129. (doi: 10.1109/LEOSWT.2009.4771690)

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2009) Wireless Injection Locking and Phase Noise Reduction in a Semiconductor Laser driven by a Resonant Tunnelling Diode Nonlinear Oscillator [paper CI3.1]. In: CLEO Europe, Munich, 2009, (doi: 10.1109/CLEOE-EQEC.2009.5196240)

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2009) Wireless to Optical Frequency Locking and Chaos using a Resonant Tunnelling - Laser Diode Circuit [paper MB3.4]. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 January 2008,

Romeira, B., Figueiredo, J.M., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2009) Wireless/Photonics Interfaces based on Resonant Tunneling Diode Optoelectronic Oscillators. In: The Conference on Lasers and Electro-Optics (CLEO)/The International Quantum Electronics Conference (IQEC), Baltimore, MD, 2-4 June 2009,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A. and Wasige, E. (2009) Novel AlN/GaN HEMTs for RF Power Applications. In: UK Semiconductors, Sheffield, UK, 2-3rd July,

2008

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. , Ironside, C.N., Quintana, J.M. and Avedillo, M.J. (2008) Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode. IET Optoelectronics, 2(6), pp. 211-215. (doi: 10.1049/iet-opt:20080024)

Slight, T.J., Romeira, B., Wang, L., Figueiredo, J.M.L., Wasige, E. and Ironside, C.N. (2008) A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment. IEEE Journal of Quantum Electronics, 44(12), pp. 1158-1163. (doi: 10.1109/JQE.2008.2000924)

Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2008) Self-oscillation and period adding from resonant tunnelling diode-laser diode circuit. Electronics Letters, 44(14), 876-U207. (doi: 10.1049/el:20080350)

Banerjee, A., Taking, S., Rahman, F. and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2008) Optoelectronic Integration of a Resonant Tunneling Diode and a Laser Diode [paper WeB4]. In: European Conference on Integrated Optics (ECIO 2008), Eindhoven, Netherlands, June 11-12-13, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. and Ironside, C.N. (2008) Synchronizing Optical to Wireless Signals Using a Resonant Tunneling Diode Laser Diode Circuit [paper TuB1]. In: LEOS Conference 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, Newport Beach, CA, November, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. , Ironside, C.N., Quintana, J.M. and Avedillo, M.J. (2008) Observation of Frequency Division and Chaos Behavior in a Laser Diode Driven by a Resonant Tunneling Diode [paper CMY5]. In: Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E. , Ironside, C.N., Quintana, J.M. and Avedillo, M.J. (2008) Synchronization and chaos in a laser diode driven by a resonant tunneling diode [Paper no. 32]. In: Conference on Semiconductor Integrated Optoelectronics (SIEO'08), Cardiff, UK, 31 Mar - 2 April 2008,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A. and Wasige, E. (2008) Low resistance Ohmic contacts for AlN/GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

2007

Rahman, F., Sun, X., Mutha, D.K.B., Watson, I.M. and Wasige, E. (2007) Investigations on ohmic contacts to bulk and heterostructure III-nitrides. In: UK Nitride Consortium Summer Meeting, Warwick, UK, 3 July 2007,

2006

Abuelmaatti, A., Thayne, I., McGregor, I. and Wasige, E. (2006) A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters. In: Asia Pacific Microwave Conference, Yokohama, Japan,

McGregor, I., Wasige, E. and Thayne, I. (2006) Sub milli-watt 2.4GHz super regenerative transceiver with ultra low duty cycle. In: Asia Pacific Microwave Conference, Yokohama, Japan, WEOF-26.

McGregor, I., Whyte, G., Elgaid, K., Wasige, E. and Thayne, I. (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK, pp. 1523-1525.

Wasige, E. (2006) Extracting the HBT series parasitics under active bias conditions. In: European Microwave Conference, Manchester, UK, pp. 1267-1270.

2005

Craig, V., Burns, G., Oxland, R. and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

McGregor, I., Maclean, D., Wasige, E. and Thayne, I. (2005) Using return ratios to desing microwave oscillators. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK, pp. 73-76.

2004

McGregor, I., Whyte, G., Wasige, E. and Thayne, I. (2004) UWB test system. In: 7th Analog Signal Processing Conference, Oxford, UK,

2003

Wasige, E. (2003) Determining the HBT base-collector elements directly from S-parameter data. In: 2003 IEEE MTTS-S International Microwave Symposium Digest, Vols 1-3, pp. 1019-1022.

2002

Sheinman, B., Wasige, E. , Rudolph, M., Doerner, R., Sidorov, V., Cohen, S. and Ritter, D. (2002) A peeling algorithm for extraction of the HBT small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 50(12), pp. 2804-2810. (doi: 10.1109/TMTT.2002.805195)

Wasige, E., Sheinman, B., Sidorov, V., Cohen, S. and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: Microwave Symposium Digest, 2002 IEEE MTT-S International, pp. 733-736.

Wasige, E. , Sheinman, B., Sidorov, V., Cohen, S. and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: 2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, USA, 02-07 Jun 2002, pp. 733-736. (doi: 10.1109/MWSYM.2002.1011733)

2000

Kompa, G., Joodaki, M. and Wasige, E. (2000) Quasi-monolithic integration technology for flexible and reliable design of microwave and millimeterwave circuits. In: Asia-Pacific Telecom (APT-2000), Velore, India, 14-16 Dec 2000, pp. 1-6.

Kompa, G. and Wasige, E. (2000) Quasi-monolithic hybrid technology based on Si micromachining and low-temperature thin-film processing. In: MICRO.tec 2000, VDE World Microtechnologies Congress, Hannover, Germany, 25-27 Sep 2000, pp. 109-114.

Kompa, G. and Wasige, E. (2000) Quasi-monolithic Si-GaAs hybrid technology for microwave and millimeter-wave application. In: First Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC 2000), Nanjing, China, Apr 2000, pp. 33-36.

1999

Wasige, E. , Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S. and Hudek, P. (1999) 12 GHz coplanar quasi-monolithic oscillator. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 227-228. ISBN 0780351355 (doi: 10.1109/MWSYM.1999.779463)

Wasige, E. , Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S. and Hudek, P. (1999) GaAs FET characterization in a quasi-monolithic Si environment. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 1889-1891. ISBN 0780351355 (doi: 10.1109/MWSYM.1999.780342)

1997

Wasige, E. and Kompa, G. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: 27th European Microwave Conference, Jerusalem, Israel, Sep 1997, pp. 375-378.

Wasige, E. , Kompa, G., van Raay, F., Rangelow, I.W., Scholz, W., Shi, F., Kassing, R., Meyer, R. and Amann, M.-C. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: IEEE MTT-S International Microwave Symposium, Denver, CO, USA, 8-13 Jun 1997, pp. 925-928. (doi: 10.1109/MWSYM.1997.602951)

1996

Wasige, E. and Kompa, G. (1996) A new silicon micro-test fixture facilitates the reusability of accurately characterized low power FET devices. In: 26th European Microwave Conference, Prague, Czech Republic, 1996, pp. 521-523.

This list was generated on Wed Nov 20 17:44:14 2024 GMT.

Jump to: Articles | Book Sections | Conference or Workshop Item | Conference Proceedings

Number of items: 175.

Articles

Hejda, M. et al. (2024) Programmable optical synaptic linking of neuromorphic photonic-electronic RTD spiking circuits. ACS Photonics, (doi: 10.1021/acsphotonics.4c01199) (Early Online Publication)

Romeira, B. et al. (2023) Brain-inspired nanophotonic spike computing: challenges and prospects. Neuromorphic Computing and Engineering, 3(3), 033001. (doi: 10.1088/2634-4386/acdf17)

Wang, J., Naftaly, M. and Wasige, E. (2022) An overview of terahertz imaging with resonant tunneling diodes. Applied Sciences, 12(8), 3822. (doi: 10.3390/app12083822)

Pessoa, L. et al. (2016) iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers. IEEE COMSOC MMTC Communications - Frontiers, 11(1), pp. 12-17.

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi: 10.1063/1.4887139)

Wang, J., Wang, L., Li, C. and Wasige, E. (2013) 28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power. Electronics Letters, 49(13), pp. 816-818. (doi: 10.1049/el.2013.1583)

Taking, S., Macfarlane, D., Khokhar, A. Z., Dabiran, A. M. and Wasige, E. (2011) DC and RF performance of AlN/GaN MOS-HEMTs. IEICE Transactions on Electronics, E94-C(5), pp. 835-841.

Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi: 10.1155/2011/821305)

Book Sections

Conference or Workshop Item

Dhongde, A., Ofiare, A., Karami, K. and Wasige, E. (2023) Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks. UK Semiconductors 2023, Sheffield, UK, 12-13 July 2023. (Accepted for Publication)

Cheng, H., Dhongde, A., Karami, K. , Reynolds, P. , Thoms, S. , Wasige, E. and Li, C. (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dwidar, M., Wasige, E. and Al-Khalidi, A. (2022) Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs. UKNC 2022, 06 Jul 2022.

Samanta, S. , Wang, J. and Wasige, E. (2021) Two-Step Lithography RTD Fabrication Process Using Air-Bridge Technology. Compound Semiconductor Week 2021 (CSW-2021), 09-13 May 2021.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

Wasige, E. , Wang, J. and Al-Khalidi, A. (2019) Mm-wave/THz Multi-Gigabit Wireless Links. ARMMS Conference, Thame, UK, 01-02 Apr 2019.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

Vasilevska, M. , Al-Khalidi, A. and Wasige, E. (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Al-Khalidi, A. and Wasige, E. (2015) Advanced Gallium Nitride Technology for Microwave Power Amplifiers. Defence and Security Doctoral Symposium, Swindon, UK, 25-26 Nov 2015.

Al-Khalidi, A. , Macfarlane, D. and Wasige, E. (2012) Self-aligned Recessed Ohmic Contacts for GaN-based High Electron Mobility Transistors. UK Nitride Consortium 2012, Sheffield, UK, 4-5 Jul 2012.

Conference Proceedings

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Wang, J., Wang, L., Li, C. , Cumming, D. and Wasige, E. (2013) Novel resonant tunnelling diode oscillator with high output power. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Banerjee, A., Taking, S., MacFarlane, D. and Wasige, E. (2010) Enhancement Mode GaN-based MOSHEMTs. In: ARMMS: RF and Microwave Society Conference, Steventon, Oxfordshire, 19th and 20th April,

Wang, L. and Wasige, E. (2010) Tunnel Diode Microwave Oscillators Employing a Novel Power Combining Circuit Topology. In: European Microwave Conference, September, 2010,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A. and Wasige, E. (2009) Novel AlN/GaN HEMTs for RF Power Applications. In: UK Semiconductors, Sheffield, UK, 2-3rd July,

Banerjee, A., Taking, S., Rahman, F. and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A. and Wasige, E. (2008) Low resistance Ohmic contacts for AlN/GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

McGregor, I., Wasige, E. and Thayne, I. (2006) Sub milli-watt 2.4GHz super regenerative transceiver with ultra low duty cycle. In: Asia Pacific Microwave Conference, Yokohama, Japan, WEOF-26.

Wasige, E. (2006) Extracting the HBT series parasitics under active bias conditions. In: European Microwave Conference, Manchester, UK, pp. 1267-1270.

Craig, V., Burns, G., Oxland, R. and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

McGregor, I., Maclean, D., Wasige, E. and Thayne, I. (2005) Using return ratios to desing microwave oscillators. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK, pp. 73-76.

McGregor, I., Whyte, G., Wasige, E. and Thayne, I. (2004) UWB test system. In: 7th Analog Signal Processing Conference, Oxford, UK,

Wasige, E. (2003) Determining the HBT base-collector elements directly from S-parameter data. In: 2003 IEEE MTTS-S International Microwave Symposium Digest, Vols 1-3, pp. 1019-1022.

Wasige, E. , Sheinman, B., Sidorov, V., Cohen, S. and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: 2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, USA, 02-07 Jun 2002, pp. 733-736. (doi: 10.1109/MWSYM.2002.1011733)

This list was generated on Wed Nov 20 17:44:14 2024 GMT.

Grants

[1] Resonant tunneling diode microwave and millimeterwave sources, Engineering and Physical Sciences Research Council (EPSRC), first grant scheme, GR/S7580/01, £121k, 2004-2006, Principal Investigator (PI)

[2] Sub 100nm III-V MOSFETs for digital applications, EPSRC standard grant, GR/S61218/01, £3.3M, 2004-2007, Co-Investigator (Co-I)

[3] Advanced gallium nitride technology for microwave power amplifiers, Defence Science and Technology Laboratory (DSTL), Ministry of Defence (UK), Contract no. DSTLX1000064098, £161k, 2012-2016, PI

[4] Compact MMIC terahertz sources in the 0.1 - 1 THz range, EPSRC standard grant, EP/J019747/1, £583k, 2013-2016, PI

[5] Silicon compatible GaN power electronics, EPSRC programme grant, £6.19M, EP/K014471/1, 2013-2018, Co-I

[6] iBROW - Innovative ultra-BROadband ubiquitous Wireless communications through terahertz transceivers, European Commission H2020 contract, €4M, project 645369, 2015-2018, Coordinator & Technical Lead

[7] TERAPOD - Terahertz based ultra high bandwidth wireless networks, European Commission H2020 contract, €3.5M, project 761579, 2017-2020, Glasgow PI

[8] TeraApps - Doctoral training network in terahertz technologies for imaging, radar and communication applications, European Commission H2020 Marie Skłodowska-Curie Actions, Innovative Training Network, €3.9M, project 765426, 2018-2022, Coordinator

[9] WiPhi - High performance wireless/photonic interfaces for 60 GHz radio over fibre applications, Innovate UK, £285k, project 103443, 2018-2019, Glasgow PI

[10] Novel GaN power devices and packaging technologies for 300°C ambient operation, EPSRC standard grant, £573k, EP/R024413/1, 2018-2021, PI

[11] DLINK - D-band wireless backbone with fibre data rate, EPSRC standard grant, £457k, EP/S009442/1, 2019-2021, PI

[12] ChipAI - Energy-efficient and high-bandwidth neuromorphic nanophotonic Chips for Artificial Intelligence systems, European Commission H2020 contract, FETOPEN-RIA-2018, €3.9M, project 828841, 2019-2022, Glasgow PI

Supervision

Affiliated Research Fellow

Professor Ying Ding

Current PDRAs

Dr Jue Wang, Dr Sanna Taking, Dr Afesomeh Ofiare, Dr Qusay Al-Taai, Dr Swagata Samanta, Dr Andrei Cornescu

Current PhD Students

Razvan Morariu, Maira Elksne, Davide Cimbri (Marie Curie Fellow), Aniket Dhongde, Mohamad Aldirani

Past PhDs

Ian McGregor (University of Glasgow)
Abhishek Banerjee (ON Semiconductors, Belgium)
Sanna Taking (Universiti Malaysia Perlis, Malaysia)
Liquan Wang (Shanghai Electro-Mechanical Engineering Institute, China)
Jue Wang (University of Glasgow)
Douglas Macfarlane (Infineon, Austria)
Abdullah Al-Khalidi (University of Glasgow)
Raphael Brown (Keysight Technologies, UK)
Salah Sharabi
Afesomeh Ofiare (University of Glasgow)
Khalid Alharbi (King Abdulaziz University, Saudi Arabia)
Monageng Kgwadi (University of Botswana, Botswana)
Andrei Cornescu (University of Glasgow)

Prospective Reseach Students/Fellows

Prospective research students or postdoctoral fellows should make an initial informal email contact with a copy of their CV and a brief note of research interests and career ambitions.

Dwidar, Mahmud Hamid Abdelsattar
Thermally Efficient Gallium Nitride Transistors for Future Wireless Communications
Iloke, Joel Idor
Nitrogen Polar Gallium Nitride Transistor Technology for 6G Applications

Teaching

ENG4138/ENG5092 VLSI Design 4/M
ENG5174 Nanofabrication
ENG3023 Electromagnetic Compatibility 3
ENG1021 Electronic Engineering 1X

Research datasets

Jump to: 2023 | 2022

Number of items: 2.

2023

Nowack, T. , Shah, Y. D. , Grant, J. , Escorcia Carranza, I. , Kenney, M. G. , Faccio, D. , Wasige, E. and Cumming, D. (2023) Metasurface Optics with on-axis Polarization Control for Terahertz Sensing Applications. [Data Collection]

2022

Nowack, T. , Shah, Y. D. , Escorcia Carranza, I. , Grant, J. , Kenney, M. G., Pusino, V. , Faccio, D. , Wasige, E. and Cumming, D. (2022) Terahertz polarimetry with a monolithic metasurface. [Data Collection]

This list was generated on Thu Nov 21 02:20:43 2024 GMT.

Additional information

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We hosted a Terahertz Electronics Workshop on 23-24 April 2018.

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Professor Edward Wasige

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