Dr Luiz Felipe Aguinsky

  • Lecturer (Engineering UEST China)

email: Luiz.Aguinsky@glasgow.ac.uk
pronouns: He/him/his

Room 722, Rankine Building, 79-85 Oakfield Avenue, Glasgow, G12 8LT

Import to contacts

ORCID iDhttps://orcid.org/0000-0003-4722-0636

Biography

I am a Lecturer in Computational Nanoelectronics and Deputy Group Leader of the DeepNano Research Group at the University of Glasgow. I obtained my PhD (Dr. techn.) with distinction from TU Wien (Austria) in the Christian Doppler Laboratory in High Performance TCAD of the Institute for Microelectronics working on modelling of semiconductor fabrication processes. Afterwards, I was Erwin Schrödinger Fellow at the Computational Electronics Group of ETH Zurich where I developed machine learning-enhanced atomistic models of memristors. I am a member of the Technical Committee on Modelling and Simulation of the IEEE Nanotechnology Council.

Research interests

  • ML-Enhanced Modelling
  • Emerging Memory Devices
  • Semiconductor Process Simulation
  • Density Functional Theory
  • Atomic Layer Processing (Deposition/Etching)
  • ab initio Quantum Transport
  • Neuromorphic Computing
  • Applied Computer Graphics Techniques (Ray Tracing)
  • Level-Set Method

Publications

Prior publications

Article

Christoph Lenz, Luiz Felipe Aguinsky, Andreas Hössinger, Josef Weinbub (2023) A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions Luiz Felipe Aguinsky. ISSN 1573-7691 (doi: 10.1007/s10915-023-02133-5)

Luiz Felipe Aguinsky, Frâncio Rodrigues, Tobias Reiter, Xaver Klemenschits, Lado Filipovic, Andreas Hössinger, Josef Weinbub (2023) Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures Luiz Felipe Aguinsky. ISSN 0038-1101 (doi: 10.1016/j.sse.2022.108584)

Luiz Felipe Aguinsky, Christoph Lenz, Paul Manstetten, Luiz Felipe Aguinsky, Francio Rodrigues, Andreas Hössinger, Josef Weinbub (2023) Automatic grid refinement for thin material layer etching in process TCAD simulations Luiz Felipe Aguinsky. ISSN 0038-1101 (doi: 10.1016/j.sse.2022.108534)

(2022) Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon Luiz Felipe Aguinsky. ISSN 0038-1101 (doi: 10.1016/j.sse.2022.108262)

(2021) Modeling and analysis of sulfur hexafluoride plasma etching for silicon microcavity resonators Luiz Felipe Aguinsky. ISSN 1361-6439 (doi: 10.1088/1361-6439/ac2bad)

(2021) Continuum level-set model for anisotropic wet etching of patterned sapphire substrates Luiz Felipe Aguinsky. ISSN 1361-6641 (doi: 10.1088/1361-6641/abe49b)

Book Section

(2021) Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si Luiz Felipe Aguinsky. (doi: 10.1109/eurosoi-ulis53016.2021.9560685)

Conference Proceedings

(2021) Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena Luiz Felipe Aguinsky. ISBN 978-89-89453-30-7

(2021) Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si Luiz Felipe Aguinsky.

(2021) Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching Luiz Felipe Aguinsky.

(2019) A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description Luiz Felipe Aguinsky. ISBN 978-3-9504738-0-3

(2019) An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching Luiz Felipe Aguinsky.

(2019) High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport Luiz Felipe Aguinsky.

(2019) High-Performance Ray Tracing for Nonimaging Applications Luiz Felipe Aguinsky.

(2019) Recent Advances in High Performance Process TCAD Luiz Felipe Aguinsky.

(2019) Three-Dimensional TCAD for Atomic Layer Processing Luiz Felipe Aguinsky.

Professional activities & recognition

Prizes, awards & distinctions

  • 2021: EUROSOI-ULIS Best Poster Award (Solid-State Electronics)

Research fellowships

  • 2023 - 2025: Erwin Schrödinger Fellowship, Austrian Science Fund

Professional & learned societies

  • 2021: Member, IEEE (The Institute of Electrical and Electronics Engineers)
  • 2023: Member, IEEE Nanotechnology Council Modelling and Simulation Technical Committee (TC 10)