Dr Abdullah Al-Khalidi

Lecturer (Electronic & Nanoscale Engineering)

telephone: +44 (0) 141 330 4130
email: Abdullah.Al-Khalidi@glasgow.ac.uk

Research interests

Abdullah Al-Khalidi received the BEng, MSc and PhD degrees from the University of Glasgow in 2010, 2011 and 2015, respectively. From 2015-2019, he was a postdoctoral researcher at the University of Glasgow. His main research interests include THz resonant tunnelling diodes (RTDs) and gallium nitride (GaN) transistor technologies.

Publications

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Number of items: 70.

2024

Dudek, A., Al-Khalidi, A. , Wincza, K. and Wagih, M. (2024) Sub-THz On-Chip CPW Monopole on InP with Cross-shaped Slot for Bandwidth Enhancement. In: 18th European Conference on Antennas and Propagation (EuCAP 2024), Glasgow, Scotland, 17-22 March 2024, ISBN 9788831299091 (doi: 10.23919/EuCAP60739.2024.10501645)

2023

Li, C. , Ofiare, A., Wang, J., Cheng, H., Al-Khalidi, A. and Wasige, E. (2023) Case Studies on Millimetre-wave and Terahertz On-chip Circuit Test Cluster for 6G Communications and Beyond programme at the University of Glasgow. Automated RF & Microwave Measurement Society (ARMMS) 2023 Autumn, Cambourne, UK, 06-07 Nov 2023.

Alomari, S., Al-Taai, Q. , Elksne, M. , Al-Khalidi, A. , Wasige, E. and Figueiredo, J. (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

Karami, K. , Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2023) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. International Journal of Electronics and Communication Engineering, 17(2), pp. 47-50.

2022

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Dwidar, M., Wasige, E. and Al-Khalidi, A. (2022) Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs. UKNC 2022, 06 Jul 2022.

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Al-Taai, Q. R. A. , Morariu, R. , Wang, J., Al-Khalidi, A. , Al-Moathin, A., Romeira, B., Figueiredo, J. and Wasige, E. (2022) Towards an Excitable Microwave Spike Generator for Future Neuromorphic Computing. In: European Microwave Week 2021, London, UK, 02-07 Apr 2022, pp. 386-389. ISBN 9781665447225 (doi: 10.23919/EuMIC50153.2022.9783686)

Cimbri, D. , Wang, J., Al-Khalidi, A. and Wasige, E. (2022) Resonant tunnelling diodes high-speed terahertz wireless communications - a review. IEEE Transactions on Terahertz Science and Technology, 12(3), pp. 226-244. (doi: 10.1109/TTHZ.2022.3142965)

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Wang, J., Al-Khalidi, A. , Ahearne, S. and Wasige, E. (2022) 22Gbps/80cm Low-Cost THz Wireless System. In: European Microwave Week 2021, London, UK, 02-07 Apr 2022, ISBN 9782874870637 (doi: 10.23919/EuMC50147.2022.9784247)

2021

Al-Taai, Q. R. A. , Wang, J., Morariu, R. , Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Analysis of stability of nano- vs micro-sized resonant tunnelling diode (RTD) devices for future neuromorphic computing applications. International Journal of Nanoelectronics and Materials, 14, pp. 149-155.

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Wang, J., Al-Khalidi, A. , Ahearne, S. and Wasige, E. (2021) 1080P HD Video Transmission using RTD Transmitter. In: 14th UK-Europe-China Workshop on Millimetre Waves and THz Technologies (UCMMT2021), Lancaster, UK, 13-15 Sept 2021, ISBN 9781665438537 (doi: 10.1109/UCMMT53364.2021.9569915)

Basu, R., Rao, J. N., Letizia, R., Ni, Q., Wasige, E. and Al-Khalidi, A. (2021) Front End for D-band High Data Rate Point to Point Links. 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020), Buffalo, NY, USA, 8-13 Nov 2020.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

Al-Taai, Q. R. A. , Al-Khalidi, A. , Wang, J., Romeira, B., Figueiredo, J. and Wasige, E. (2021) Extremely low-power consumption nano-RTD photodetectors for future neuromorphic computing. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 Jun 2021.

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Zhang, W., Al-Khalidi, A. , Figueiredo, J., Al-Taai, Q. R. A. , Wasige, E. and Hadfield, R. H. (2021) Analysis of excitability in resonant tunneling diode-photodetectors. Nanomaterials, 11(6), 1590. (doi: 10.3390/nano11061590)

2020

Paoloni, C., Basu, R., Billa, L. R., Rao, J. M., Letizia, R., Ni, Q., Wasige, E. , Al-Khalidi, A. , Wang, J. and Morariu, R. (2020) Long‐range millimetre wave wireless links enabled by travelling wave tubes and resonant tunnelling diodes. IET Microwaves, Antennas and Propagation, 14(15), pp. 2110-2114. (doi: 10.1049/iet-map.2020.0084)

Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, A. , Wasige, E. and Kalna, K. (2020) The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability, 115, 113965. (doi: 10.1016/j.microrel.2020.113965)

Al-Khalidi, A. , Alharbi, K. H., Wang, J., Morariu, R. , Wang, L., Khalid, A., Figueiredo, J. and Wasige, E. (2020) Resonant tunnelling diode terahertz sources with up to 1 mW output power in the J-band. IEEE Transactions on Terahertz Science and Technology, 10(2), pp. 150-157. (doi: 10.1109/TTHZ.2019.2959210)

2019

Morariu, R. , Wang, J., Cornescu, A. C., Al-Khalidi, A. , Ofiare, A., Figueiredo, J. M.L. and Wasige, E. (2019) Accurate small-signal equivalent circuit modelling of resonant tunneling diodes to 110 GHz. IEEE Transactions on Microwave Theory and Techniques, 67(11), pp. 4332-4340. (doi: 10.1109/TMTT.2019.2939321)

Cornescu, A. C., Morariu, R. , Ofiare, A., Al-Khalidi, A. , Wang, J., Figueiredo, J. M.L. and Wasige, E. (2019) High efficiency bias stabilisation for resonant tunneling diode oscillators. IEEE Transactions on Microwave Theory and Techniques, 67(8), pp. 3449-3454. (doi: 10.1109/TMTT.2019.2916602)

Zhang, W. et al. (2019) Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator. Optics Express, 27(12), pp. 16791-16797. (doi: 10.1364/OE.27.016791) (PMID:31252899)

Al-Khalidi, A. , Wang, J. and Wasige, E. (2019) Mm-wave/THz Multi-Gigabit Wireless Links Using Resonant Tunnelling Diodes. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2019), Cabourg, France, 17-19 June 2019.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Wasige, E. , Wang, J. and Al-Khalidi, A. (2019) Mm-wave/THz Multi-Gigabit Wireless Links. ARMMS Conference, Thame, UK, 01-02 Apr 2019.

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

2018

Wang, J., Al-Khalidi, A. , Wang, L., Morariu, R. , Ofiare, A. and Wasige, E. (2018) 15 Gb/s 50-cm wireless link using a high power compact III-V 84 GHz transmitter. IEEE Transactions on Microwave Theory and Techniques, 66(11), pp. 4698-4705. (doi: 10.1109/TMTT.2018.2859983)

Vasilevska, M. , Al-Khalidi, A. and Wasige, E. (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) A Compact Terahertz Source Technology for Automotive Radar and Other Applications. In: 19th International Radar Symposium (IRS2018), Bonn, Germany, 19-22 Jun 2018, ISBN 9783736995451

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) THz Electronics for Data Centre Wireless Links - the TERAPOD Project. In: 9th International Congress on Ultra Modern Telecommunications and Control Systems, Munich, Germany, 6-8 Nov 2017, pp. 445-448. ISBN 9781538634356 (doi: 10.1109/ICUMT.2017.8255202)

Al-Khalidi, A. , Wang, J. and Wasige, E. (2018) Compact J-band Oscillators with 1 mW RF Output Power and over 110 GHz Modulation Bandwidth. In: 43rd International Conference on Infrared, Milimeter and Terahertz Waves (IRMWW-THz 2018), Nagoya, Japan, 9-14 Sep 2018, ISBN 9781538638095 (doi: 10.1109/IRMMW-THz.2018.8510099)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

Wang, J., Al-Khalidi, A. , Morariu, R. , Ofiare, A., Wang, L. and Wasige, E. (2018) 15 Gbps Wireless Link Using W-band Resonant Tunnelling Diode Transmitter. In: 2018 15th European Radar Conference (EuRAD), Madrid, Spain, 26-28 Sep 2018, pp. 385-388. ISBN 9782874870538 (doi: 10.23919/EuRAD.2018.8546598)

2017

Wang, J., Al-Khalidi, A. , Zhang, C., Ofiare, A., Wang, L., Wasige, E. and Figueiredo, J. M. L. (2017) Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter. In: 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Liverpool, UK, 11-13 Sept 2017, pp. 1-4. ISBN 9781538627204 (doi: 10.1109/UCMMT.2017.8068497)

Wang, J., Al-Khalidi, A. , Zhang, C., Cornescu, A., Morariu, R. and Wasige, E. (2017) Resonant Tunneling Diode Oscillator Source for Terahertz Applications. Oxford Circuits and Systems Conference (OXCAS 2017), Oxford, UK, 19 Sep 2017.

Bissell, V., Rodrigues, G. C., Wang, J., Al-Khalidi, A. , Alharbi, K. H. and Wasige, E. (2017) Resonant Tunneling Diode Photodetectors for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, p. 1045307. ISBN 9781510613836 (doi: 10.1117/12.2271317)

Watson, S. , Zhang, W., Wang, J., Al-Khalidi, A. , Cantu, H., Figueiredo, J., Wasige, E. and Kelly, A. E. (2017) Resonant Tunneling Diode Oscillators for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Q. ISBN 9781510613836 (doi: 10.1117/12.2276319)

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wang, J., Al-Khalidi, A. , Cornescu, A., Morariu, R. , Khalid, A.-u.-H. , Cumming, D. and Wasige, E. (2017) Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wasige, E. , Al-Khalidi, A. , Alharbi, K. and Wang, J. (2017) High performance microstrip resonant tunneling diode oscillators as terahertz sources. In: UK-Europe-China Workshop on mm-waves and THz Technologies committee (UCMMT2016), Qingdao, China, 5-7 Sep 2016, pp. 25-28. ISBN 9781509022762 (doi: 10.1109/UCMMT.2016.7873950)

Wasige, E. , Alharbi, K. H., Al-Khalidi, A. , Wang, J. and Khalid, A. (2017) Resonant Tunnelling Diode Terahertz Sources for Broadband Wireless Communications. In: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, San Francisco, CA, USA, 28 Jan - 2 Feb 2017, (doi: 10.1117/12.2256357)

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H., Wasige, E. and Figueiredo, J. (2017) High Performance Resonant Tunneling Diode Oscillators as Terahertz Sources. In: European Microwave Conference, London, 3-7 Oct 2016, pp. 341-344. ISBN 9782874870439 (doi: 10.1109/EuMC.2016.7824348)

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi: 10.1117/12.2276350)

2016

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H. and Wasige, E. (2016) G-Band MMIC Resonant Tunneling Diode Oscillators. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi: 10.1109/ICIPRM.2016.7528736)

Pessoa, L. et al. (2016) iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers. IEEE COMSOC MMTC Communications - Frontiers, 11(1), pp. 12-17.

2015

Al-Khalidi, A. and Wasige, E. (2015) Advanced Gallium Nitride Technology for Microwave Power Amplifiers. Defence and Security Doctoral Symposium, Swindon, UK, 25-26 Nov 2015.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2015) AlN/GaN HEMT Technology with In-situ SiNx Passivation. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 251-253. ISBN 9781479982295 (doi: 10.1109/PRIME.2015.7251382)

Li, X. , Floros, K., Ternent, G., Al-Khalidi, A. , Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

2014

Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X. , Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi: 10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi: 10.1002/pssc.201300179)

Al-Khalidi, A. , Gallacher, K. , Khalid, A. , Paul, D. and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A. , Gallacher, K. and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Faramehr, S., Al-Khalidi, A. , Khalid, A. , Wasige, E. , Igić, P. and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Li, X. , Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X. , Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl₄based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi: 10.1063/1.4887139)

Sinclair, J., Brown, R., Al-Khalidi, A. and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

2013

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S. and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A. , Ternent, G., Thayne, I. and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

2012

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

Al-Khalidi, A. , Macfarlane, D. and Wasige, E. (2012) Self-aligned Recessed Ohmic Contacts for GaN-based High Electron Mobility Transistors. UK Nitride Consortium 2012, Sheffield, UK, 4-5 Jul 2012.

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