Recent Progress and Status of Nitride and Photonic Device Research for Next Generation Energy Efficient Network in Korea - Dr Eun-Soo Nam, ETRI (Electronics & Telecommunications Research Institute), South Korea
Published: 23 September 2016
Date: Monday, 3rd October 2016, 11:00-12:00 Venue: Room 816, Rankine Building
Dr Eun-Soo Nam, ETRI, South Korea, will be visiting the School of Engineering. As part of his visit he will deliver a seminar entitled, "Recent Progress and Status of Nitride and Photonic Device Research for Next Generation Energy Efficient Network in Korea". Abstract and biography are given below.
Date & Time: 11:00, Monday, 3rd October
Venue: Room 816, Rankine Building
Abstract
Data center networks form the backbone infrastructure of many large-scale enterprise applications as well as emerging cloud-based services. This is in line with the rapid development in the field of Internet of Things (IoT). Core networks, including backbones and data centers, are expected to have the biggest increase in electricity consumption in the future, since their energy consumption is increasing almost proportionally to the traffic. Optical technologies are widely accepted as a future proof and cost-effective approach for supporting the future traffic demands and services at the lowest energy footprint possible. The future data center networks with optical interconnects are supported by several novel architectures, such as optical circuits, optical switching, optical OFDM, and others. In this talk, we extensively review recent research findings and emerging technologies, such as a Gallium-Nitride transistors (GaN), digital coherent detection and the flexible grid dense wavelength-division multiplexed channel technology for SDN.
Biography
Dr Eun-Soo Nam received a B.Sc. degree in Physics from Kyung-Pook National University, Daegu, Korea in 1983, and M.Sc. and Ph.D. degrees in Physics from the State University of New York, Buffalo, USA, in 1992 and 1994, respectively. In 1994, he joined the Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea, where his research involved compound semiconductor devices, including GaAs and GaN based high frequency power device platform, long wavelength InP semiconductor photonic devices, OEIC (Optoelectronic Integrated Circuit) for microwave circuits, and SDN network devices. In 2006, he was a Visiting Scholar at the Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA. He is now Vice President, managing the materials and devices R&D in ETRI, Korea. He is the recipient of many distinguished awards and honors, including the 2014 Korean Prime Minister's award for global leadership, 2010 ETRI Outstanding Electrical and Computer Engineer Award, and Best Paper Awards. He has published more than 100 reviewed papers, and presented many plenary talks in international meetings. He is also a co-inventor of 90 international patents in the fields of RF devices and photonics. He is currently serving as the Korean Optoelectronic Society Vice President for Technical Activities.
First published: 23 September 2016