Tunnel Field Effect Transistors: State-of-Art and Challenges - Professor Zunchao Li, Xi’an Jiaotong University
Published: 1 June 2017
Date: Thursday, 8th June 2017, 14:00-15:00 Venue: Room 514, Rankine Building
Professor Zunchao Li, School of Microelectronics, Xi'an Jiaotong University, will be visiting the School of Engineering. As part of his visit he will deliver a seminar entitled, "Tunnel Field Effect Transistors: State-of-Art and Challenges". Abstract and biography are given below.
Date & Time: 14:00, Thursday, 8th June
Venue: Room 514, Rankine Building
Abstract
Reducing supply voltage is an efficient way to address the power dissipation in nano-electronic circuits. The tunnel field effect transistor (TFET) is considered as a promising candidate for future high-performance, low-standby power, and energy efficient logic circuit application, benefiting from its steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. But there are still many challenges in realizing TFETs in integrated circuits. In this talk, I will illustrate the progress in the development and optimization of low-power TFETs including material selection, structure design, analytical modelling, reliability problems and circuit consideration.
Biography
Zunchao Li is a professor in the School of Microelectronics in Xi’an Jiaotong University, China. He received the PhD degree from Xi’an Jiaotong University, the MS degree from Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Sciences, the BS degree from Northwest University, China, respectively. He was a visiting scholar in the University of British Columbia, Canada and in the National Taipei University. His research interests are focused on new structure and mechanism of semiconductor devices, and energy harvesting and biomedical integrated circuits.
First published: 1 June 2017
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