Number of items: 5.
2010
Li, X., Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S. , Macintyre, D.S. and Thayne, I.
(2010)
Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6),
(doi: 10.1116/1.3501355)
2008
McCahill, A., Campbell, L., McSorley, T., Lynch, M. J., Li, X., Yang, C., Baillie, G. S. , Houslay, M. D. and Sood, A.
(2008)
In cardiac myocytes, cAMP elevation triggers the down-regulation of transcripts and promoter activity for cyclic AMP phosphodiesterase-4A10 (PDE4A10).
Cellular Signalling, 20(11),
pp. 2071-2083.
(doi: 10.1016/j.cellsig.2008.07.017)
2006
Li, X., Zhou, H., Hill, R., Wilkinson, C. and Thayne, I.
(2006)
Dry etching of a device quality high-k GaxGdyOz oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs.
In: 32nd International Conference on Micro-and Nano-Engineering 2006, Barcelona, Spain,
2005
Li, X., Cao, X., Zhou, H., Wilkinson, C., Thoms, S., Macintyre, D., Holland, M. and Thayne, I.
(2005)
A low damage RIE process for the fabrication of cmpound semiconductor based transistors wtih sub-100nm tungsten gates.
In: 31st International Conference on Micro and Nano-Engineering 2005, Vienna, Austria,
2004
Li, X., Elgaid, K., McLelland, H. and Thayne, I.
(2004)
Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs.
In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands,
This list was generated on Wed Oct 30 16:05:18 2024 GMT.