Course Catalogue

View Specification Document | Reading List

The aim of this course is to provide students with fundamental knowledge relevant to the design of monolithic microwave integrated circuits. Students will learn the high-frequency design processes and tools necessary to obtain the circuit layout of passive and active microwave circuits and understand operation of advanced microwave transistors, including high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs).

This course will be timetabled in blocks, typically one week in four with tutorials and on-line support available between each block.

Mandatory Entry Requirements

None

Recommended Entry Requirements

None

None

None

Assessment

Examination 75%

Lab Report 25%

Reassessment

In accordance with the University's Code of Assessment reassessments are normally set for all courses which do not contribute to the honours classifications. For non-honours courses, students are offered reassessment in all or any of the components of assessment if the satisfactory (threshold) grade for the overall course is not achieved at the first attempt. This is normally grade D3 for undergraduate students, and grade C3 for postgraduate students. Exceptionally it may not be possible to offer reassessment of some coursework items, in which case the mark achieved at the first attempt will be counted towards the final course grade. Any such exceptions are listed below in this box.

Due to the nature of the coursework and sequencing of courses, it is not possible to reassess the coursework laboratory.

Due to the nature of the coursework and sequencing of courses, it is not possible to reassess the coursework. The initial grade on coursework will be used when calculating the resit grade.

The aim of this course is to introduce students to the design of high frequency circuits and the operation of advanced high-frequency active devices, including high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs).

By the end of this course students will be able to:

• explain the operation of high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT) applied to microwave integrated circuits;

• calculate the mismatch between devices and/or subcircuits and design a matching network;

• describe and draw the process flow for monolithic microwave integrated circuits (MMICs);

• apply industry standard microwave circuit simulation tools to predict the response of passive and active microwave devices and circuits;

• design passive and active microwave integrated circuit elements using s-parameters, such as filters, amplifiers, oscillators and low noise receivers.

Students must submit at least 75% by weight of the components (including examinations) of the course's summative assessment. In addition students must submit a lab report for assessment or a grade of credit withheld will be given.

Students must attend the timetabled laboratory classes.

Note that these are minimum requirements: good students will achieve far higher participation/submission rates. Any student who misses an assessment or a significant number of classes because of illness or other good cause should report this by completing a MyCampus absence report.